Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

Chih-Yao Wang; Jenn-Gwo Hwu

doi:10.1149/1.3206635

Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

ECS Transactions ◽

10.1149/1.3206635 ◽

2019 ◽

Vol 25 (6) ◽

pp. 361-370

Author(s):

Chih-Yao Wang ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Temperature Sensors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

ECS Meeting Abstracts ◽

10.1149/ma2009-02/25/2142 ◽

2009 ◽

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Temperature Sensors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of Stacked Hafnium Oxide (HfO[sub 2])/Silicon Dioxide (SiO[sub 2]) Metal-Oxide-Semiconductor Tunneling Temperature Sensors

Journal of The Electrochemical Society ◽

10.1149/1.3467866 ◽

2010 ◽

Vol 157 (10) ◽

pp. J324 ◽

Cited By ~ 9

Author(s):

Chih-Yao Wang ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Temperature Sensors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Cited By ~ 6

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

AIP Advances ◽

10.1063/5.0048080 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065304

Author(s):

Man Ding ◽

Xin Liu

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Gamma Ray ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Damage Effect ◽

Gamma Ray Irradiation ◽

Metal Oxide Semiconductor Structure

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High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

IEEE Electron Device Letters ◽

10.1109/led.2021.3061509 ◽

2021 ◽

Vol 42 (4) ◽

pp. 545-548

Author(s):

Zhe Li ◽

Zhaoqing Feng ◽

Yu Xu ◽

Qian Feng ◽

Weidong Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solar Blind

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091404 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091404 ◽

Cited By ~ 2

Author(s):

Rino Choi ◽

Tea Wan Kim ◽

Hokyung Park ◽

Byoung Hun Lee

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Instability Mechanism

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Characterization of interface defects in BiFeO3 metal–oxide–semiconductor capacitors deposited by radio frequency magnetron sputtering

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-015-3174-1 ◽

2015 ◽

Vol 26 (8) ◽

pp. 5987-5993 ◽

Cited By ~ 7

Author(s):

Senol Kaya ◽

Ercan Yilmaz ◽

Aliekber Aktag ◽

Jan Seidel

Keyword(s):

Magnetron Sputtering ◽

Metal Oxide ◽

Radio Frequency ◽

Metal Oxide Semiconductor ◽

Radio Frequency Magnetron ◽

Oxide Semiconductor ◽

Radio Frequency Magnetron Sputtering ◽

Interface Defects

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