Molecular beam epitaxy growth kinetics for group III nitrides

1996 ◽  
Vol 14 (3) ◽  
pp. 2346 ◽  
Author(s):  
C. T. Foxon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Molecular Beam Epitaxy Growth ◽  
Group Iii

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

1997 ◽  
Vol 2 ◽  
Author(s):  
Markus Kamp ◽  
M. Mayer ◽  
A. Pelzmann ◽  
K. J. Ebeling
Keyword(s):  
Molecular Beam Epitaxy ◽  
Material Properties ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Surface Cracking ◽  
Organic Vapor ◽  
N Doping ◽  
Metal Organic ◽  
Uv Leds

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.

Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

2001 ◽  
Vol 79 (20) ◽  
pp. 3263-3265 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
Y. L. Foo ◽  
P. Desjardins ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source

Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics

2000 ◽  
Vol 76 (20) ◽  
pp. 2853-2855 ◽  
Author(s):  
N. Taylor ◽  
H. Kim ◽  
P. Desjardins ◽  
Y. L. Foo ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source

The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

1996 ◽  
Vol 449 ◽  
Author(s):  
S. L. Buczkowski ◽  
Zhonghai Yu ◽  
M. Richards-Babb ◽  
N. C. Giles ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nucleation And Growth ◽  
Rf Plasma ◽  
Molecular Beam Epitaxy Growth ◽  
Dramatic Effect ◽  
Inversion Domain

ABSTRACTNucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

1998 ◽  
Vol 16 (3) ◽  
pp. 1615-1620 ◽  
Author(s):  
F. J. Grunthaner ◽  
R. Bicknell-Tassius ◽  
P. Deelman ◽  
P. J. Grunthaner ◽  
C. Bryson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Group Iii Nitrides ◽  
Group Iii
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