ingan alloys
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Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties

2020 ◽  
Vol 127 (22) ◽  
pp. 225701
Author(s):  
Stylianos A. Kazazis ◽  
Elena Papadomanolaki ◽  
Eleftherios Iliopoulos
Keyword(s):  
Optical Properties ◽  
Growth Kinetics ◽  
Carrier Localization ◽  
Ingan Alloys

scholarly journals Deep‐Level Defects and Impurities in InGaN Alloys

2020 ◽  
Vol 257 (4) ◽  
pp. 1900534
Author(s):  
Darshana Wickramaratne ◽  
Cyrus E. Dreyer ◽  
Jimmy-Xuan Shen ◽  
John L. Lyons ◽  
Audrius Alkauskas ◽  
...  
Keyword(s):  
Deep Level ◽  
Defects And Impurities ◽  
Ingan Alloys

scholarly journals Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys

2020 ◽  
Vol 65 (2) ◽  
pp. 157
Author(s):  
A. V. Zinovchuk ◽  
E. A. Sevost’yanov
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Wide Band ◽  
Stoichiometric Ratio ◽  
Interband Transitions ◽  
Recombination Rates ◽  
Wide Band Gap ◽  
Atomic Disorder ◽  
Auger Recombination Rate ◽  
Ingan Alloys

The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between the Auger recombination rates calculated in the framework of the supercell and virtual-crystal approximations showed that a large number of allowed interband transitions induced by the atomic disorder strongly increases the Auger recombination rate in wide-band-gap p-InGaN alloys.

scholarly journals Characterization of non-uniform InGaN alloys: spatial localization of carriers and optical properties

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCC03 ◽  
Author(s):  
A. Di Vito ◽  
A. Pecchia ◽  
A. Di Carlo ◽  
M. Auf der Maur
Keyword(s):  
Optical Properties ◽  
Spatial Localization ◽  
Ingan Alloys

scholarly journals Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys

2019 ◽  
Vol 512 ◽  
pp. 69-73 ◽  
Author(s):  
Kazuhiro Ohkawa ◽  
Fumitaka Ichinohe ◽  
Tomomasa Watanabe ◽  
Kenichi Nakamura ◽  
Daisuke Iida
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Quality ◽  
Growth Simulation ◽  
Ingan Alloys

Mg induced compositional change in InGaN alloys

2019 ◽  
Vol 34 (2) ◽  
pp. 025014 ◽  
Author(s):  
Iulian Gherasoiu ◽  
Kin Man Yu ◽  
Michael Hawkridge ◽  
Lothar A Reichertz ◽  
Wladek Walukiewicz
Keyword(s):  
Compositional Change ◽  
Ingan Alloys

scholarly journals Investigation of Statistical Broadening in InGaN Alloys

2018 ◽  
Vol 1135 ◽  
pp. 012050 ◽  
Author(s):  
D S Arteev ◽  
A V Sakharov ◽  
E E Zavarin ◽  
W V Lundin ◽  
A N Smirnov ◽  
...  
Keyword(s):  
Ingan Alloys

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer

2018 ◽  
Vol 52 (16) ◽  
pp. 2026-2029 ◽  
Author(s):  
Lianhong Yang ◽  
Fuqiang Guo ◽  
Baohua Zhang ◽  
Yanqing Li ◽  
Dunjun Chen
Keyword(s):  
Buffer Layer ◽  
Near Infrared ◽  
Ingan Alloys

Investigation on the effect of indium composition on ultrafast carrier dynamics in InGaN alloys

2018 ◽  
Vol 58 (1) ◽  
pp. 010903 ◽  
Author(s):  
Yi Zhang ◽  
Liangliang Tang ◽  
Keman Lin ◽  
Pei Wang ◽  
Chang Xu
Keyword(s):  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Indium Composition ◽  
Ultrafast Carrier ◽  
Ingan Alloys

scholarly journals Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

2017 ◽  
Vol 121 (19) ◽  
pp. 195301 ◽  
Author(s):  
J. Gruber ◽  
X. W. Zhou ◽  
R. E. Jones ◽  
S. R. Lee ◽  
G. J. Tucker
Keyword(s):  
Molecular Dynamics ◽  
Defect Formation ◽  
Heteroepitaxial Growth ◽  
Ingan Alloys
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