Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer

1989 ◽  
Vol 7 (4) ◽  
pp. 870 ◽  
Author(s):  
Hideki Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Compound Semiconductor

Wide bandgap II–VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy

1988 ◽  
Vol 93 (1-4) ◽  
pp. 720-725 ◽  
Author(s):  
Nobuaki Teraguchi ◽  
Yasushi Takemura ◽  
Ryuhei Kimura ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wide Bandgap ◽  
Compound Semiconductor ◽  
Semiconductor Superlattices ◽  
Metalorganic Molecular Beam Epitaxy

Growth and Properties of (Al, Ga)As / NiAl / (Al, Ga)As: An Epitaxical Semiconductor / Metal / Semiconductor System

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
N. Tabatabaie ◽  
W.K. Chan ◽  
H.L. Gilchrist ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Strong Evidence ◽  
Molecular Beam ◽  
Electron Tunneling ◽  
Compound Semiconductor ◽  
Semiconductor Heterostructures ◽  
Size Quantization ◽  
Lateral Transport ◽  
Semiconductor System

The epitaxical and thermally stable NiAI/(AI, Ga)As system is shown to meet all of the basic materials criteria for buried metal/compound semiconductor heterostructures. We describe the growth of these heterostructures by molecular beam epitaxy. Even the thinnest buried NiAI films grown thus far (1.5 nm) are electrically continuous and metallic. Electron tunneling and lateral transport measurements provide strong evidence for size quantization in NiAl films thinner than 3.5 nm. The merging of compound semiconductor tunneling barriers with epitaxical metallic quantum wells and the ability to selectively contact buried metallic quantum wells is expected to yield novel three-terminal devices.

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