Use of molecular beam epitaxy in research and development of selected high speed compound semiconductor devices

1983 ◽  
Vol 1 (2) ◽  
pp. 131 ◽  
Author(s):  
Lester F. Eastman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Research And Development ◽  
High Speed ◽  
Molecular Beam ◽  
Semiconductor Devices ◽  
Compound Semiconductor

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

Gas-Source Molecular Beam Epitaxy of Electronic Devices

1996 ◽  
Vol 421 ◽  
Author(s):  
E.A. Beam ◽  
B. Brar ◽  
T.P.E. Broekaert ◽  
H.F. Chau ◽  
W. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Molecular Beam ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Tunneling Diodes ◽  
Gas Source ◽  
Device Structures ◽  
Double Heterojunction

AbstractGas-source molecular beam epitaxy (GSMBE) has been developed into a useful tool for the growth of both optical and electronic device structures. In this paper, we report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in GSMBE for the growth of electronic device structures with state-of-the-art performance. Device structures based on both the In0.48Ga0.52P/GaAs and In0.53Ga 0.47As/InP lattice matched materials systems are described. The GSMBE system is based on the use of elemental Group-rn sources and employs thermal crackers for precracking TBA and TBP. Dopant sources include both elemental (Sn and Be) and vapor (CBr4 and SiBr4) sources. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double- heterojunction bipolar transistors (SHBTs and DHBTs). Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, heterojunction field effect transistors (HFETs), and both planar and lateral resonant tunneling diodes (RTDs.) Vertically integrated HFET and multi-RTD heterostructures for high speed logic/memory are also described.

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