Laser assisted molecular beam epitaxy (LAMBE) of compound semiconductor buffer layers and AlN, GaN structures for high electron mobility transistor

2004 ◽  
Author(s):  
Ting Feng ◽  
H.D. Young ◽  
C. Zhang ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
Compound Semiconductor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1010 ◽  
Author(s):  
Ahmed Alyamani ◽  
Evgenii V. Lutsenko ◽  
Mikalai V. Rzheutski ◽  
Vitaly Z. Zubialevich ◽  
Aliaksei G. Vainilovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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