Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

K. Y. Cheng

doi:10.1116/1.4816932

Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4816932 ◽

2013 ◽

Vol 31 (5) ◽

pp. 050814 ◽

Cited By ~ 3

Author(s):

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Compound Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Devices

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Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)

Materials Science and Engineering R Reports ◽

10.1016/0927-796x(94)00175-8 ◽

1995 ◽

Vol 14 (5) ◽

pp. 203-253 ◽

Cited By ~ 84

Author(s):

C.R. Abernathy

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Compound Semiconductor

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Issues in molecular-beam epitaxy kinetics of compound semiconductor based heterostructures

Vacuum ◽

10.1016/0042-207x(89)90905-6 ◽

1989 ◽

Vol 39 (10) ◽

pp. 991

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Compound Semiconductor ◽

Kinetics Of

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Epitaxial growth and characterization of GaSxSe1−x layered compound semiconductor by molecular beam epitaxy

Applied Surface Science ◽

10.1016/s0169-4332(97)80135-3 ◽

1997 ◽

Vol 117-118 ◽

pp. 518-522 ◽

Cited By ~ 11

Author(s):

Maman Budiman ◽

Tamotsu Okamoto ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Compound Semiconductor ◽

Layered Compound

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Wide bandgap II–VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(88)90610-0 ◽

1988 ◽

Vol 93 (1-4) ◽

pp. 720-725 ◽

Cited By ~ 18

Author(s):

Nobuaki Teraguchi ◽

Yasushi Takemura ◽

Ryuhei Kimura ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Wide Bandgap ◽

Compound Semiconductor ◽

Semiconductor Superlattices ◽

Metalorganic Molecular Beam Epitaxy

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Use of molecular beam epitaxy in research and development of selected high speed compound semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582514 ◽

1983 ◽

Vol 1 (2) ◽

pp. 131 ◽

Cited By ~ 6

Author(s):

Lester F. Eastman

Keyword(s):

Molecular Beam Epitaxy ◽

Research And Development ◽

High Speed ◽

Molecular Beam ◽

Semiconductor Devices ◽

Compound Semiconductor

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Intelligent molecular beam epitaxy system for cost-effective manufacturing of compound semiconductor epi-wafers

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981469 ◽

2002 ◽

Author(s):

H.P. Lee

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Cost Effective ◽

Compound Semiconductor ◽

Molecular Beam Epitaxy System

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Molecular-beam epitaxy growth of semiconductor heterostructure optical converter lasers using the InGaAs/AlGaAs materials system

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586748 ◽

1993 ◽

Vol 11 (3) ◽

pp. 948 ◽

Cited By ~ 3

Author(s):

W. D. Goodhue

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Semiconductor Heterostructure

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Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584616 ◽

1989 ◽

Vol 7 (4) ◽

pp. 870 ◽

Cited By ~ 96

Author(s):

Hideki Hasegawa

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Compound Semiconductor

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Role of numerical simulations in the semiconductor heterostructure technology using molecular beam epitaxy

Superlattices and Microstructures ◽

10.1016/0749-6036(86)90018-2 ◽

1986 ◽

Vol 2 (3) ◽

pp. 185-195 ◽

Cited By ~ 31

Author(s):

Jasprit Singh ◽

K.K. Bajaj

Keyword(s):

Molecular Beam Epitaxy ◽

Numerical Simulations ◽

Molecular Beam ◽

Semiconductor Heterostructure

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A soft x‐ray standing wave measurement system for analyzing compound semiconductor surfaces prepared by molecular beam epitaxy

Review of Scientific Instruments ◽

10.1063/1.1147442 ◽

1996 ◽

Vol 67 (9) ◽

pp. 3182-3186 ◽

Cited By ~ 6

Author(s):

M. Sugiyama ◽

S. Maeyama ◽

M. Oshima

Keyword(s):

Molecular Beam Epitaxy ◽

Standing Wave ◽

Measurement System ◽

Molecular Beam ◽

Compound Semiconductor ◽

Semiconductor Surfaces ◽

X Ray ◽

Wave Measurement

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