Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices

We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS2/graphene heterostructures by first-principles calculations and quantum transport simulations.

Hybrid van der Waals heterojunction based on two-dimensional materials

Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.

Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generated through interband tunneling and the electrons injected into the GaN emitter region of the GaN/AlN heterostructure devices.

Predictor of reliability indicators for nanoelectronic heterostructure devices with transverse current transfer under conditions of limited experimental information based on Bayesian inversion

Predictor of the reliability indicators of resonant tunneling diodes with a generalization of the methodology for nanoelectronic heterostructure devices with quantum confinement and transverse current transfer has been developed. The advantage of the developed software is the possibility of interactive input of additional experimental information for further calculation of point and interval estimates of the reliability indicators of semiconductor devices using Bayesian inversion, which allows predicting these indicators under conditions of limited experimental information.

High mobility transparent and conducting oxide films of La-doped SrSnO3

The synthesis and characterization of high mobility thin films of La-doped SrSnO 3 are reported. The mobility for the 7% La-doped sample is found to be 228 cm 2 V -1 s -1 . The observed high mobility is associated with the reduced carrier effective mass and scattering centers of various scattering mechanisms. The enhancement in mobility and the increase in carrier concentration after doping reduced the resistivities of the thin films by 5 orders of magnitude. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy revealed that La-dopant and oxygen vacancies donate the electrons in the films. Films were highly transparent (> 90%) in the visible region. These materials have great potential to be used in the optoelectronic and heterostructure devices.