Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

1989 ◽  
Vol 7 (4) ◽  
pp. 775 ◽  
Author(s):  
J. T. Fitch
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Intrinsic Stress ◽  
Stress Gradients

Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
C.H. Bjorkman ◽  
J.T. Fitch ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Thermal Oxidation ◽  
Thermal Annealing ◽  
High Temperatures ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Stress Gradients ◽  
Beam Bending ◽  
Thermally Grown

ABSTRACTWe have studied stress gradients in thermally grown SiO2 thin films and relaxation of the stress by rapid thermal annealing. These properties were examined by incrementally etching back the SiO2 films and performing infrared spectroscopy and beam-bending measurements at each thickness. The thickness-averaged values measured were then deconvoluted to obtain stress values for thin layers of the SiO2 films. We observed steep stress gradients close to the Si/SiO2 interface for wet oxides which were similar to those previously studied in dry oxides. The stress gradients were steeper for films grown or annealed at high temperatures. In addition, we have been able to show that thin films (= 200 Å) relax more freely than thicker films (= 1000 Å), in which oxide close to the interface is prevented from relaxing by the oxide on top of it.

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

1997 ◽  
Vol 470 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Thermal Oxidation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Back Side ◽  
Control Accuracy

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

SiGe Nanocrystals Fabricated by One-Step Thermal Oxidation and Rapid Thermal Annealing

2008 ◽  
Vol 11 (4) ◽  
pp. K44 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
M. C. Tsai ◽  
K. M. Fan ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
One Step

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chyuan-Haur Kao ◽  
C. S. Lai ◽  
M. C. Tsai ◽  
C. H. Lee ◽  
C. S. Huang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
One Step ◽  
Amorphous Si ◽  
Annealing Method ◽  
Ge Nanocrystals

AbstractIn this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on polycrystalline-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.

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