Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxy

1989 ◽  
Vol 7 (5) ◽  
pp. 1171 ◽  
Author(s):  
Y. Suda
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

In situ study of a strontium β-diketonate precursor for thin-film growth by atomic layer epitaxy

1994 ◽  
Vol 4 (8) ◽  
pp. 1239-1244 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Andres Jaek ◽  
Markku Leskelä ◽  
Lauri Niinistö
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Atomic Layer Epitaxy ◽  
In Situ Study

UV Photostimulated Si Atomic-Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
D. Lubben ◽  
R. Tsu ◽  
T. R. Bramblett ◽  
J. E. Greene
Keyword(s):  
Film Growth ◽  
Laser Energy ◽  
Reaction Pathway ◽  
Atomic Layer ◽  
Laser Pulses ◽  
Growth Cycle ◽  
Atomic Layer Epitaxy ◽  
Extended Defects ◽  
Wide Range ◽  
Si Films

ABSTRACTSingle-crystal Si films have been grown on Si(001)2×1 substrates by UVphotostimulated atomic-layer epitaxy (ALE) from Si2H6. The ALE deposition rate R per growth cycle remains constant at 0.4 monolayers (ML) over a wide range of deposition parameters: growth temperature (Ts= 180–400 °C), Si2H6 exposure (peak pressure during gas pulse = 0.1−5 mTorr), laser energy density ( = 250–450 mJ cm−2 where is determined by Ts), and number of UV laser pulses per cycle. A film growth mocrel, based upon the results of the present deposition experiments and Monte Carlo simulations, together with our previous adsorption/desorption measurements, Is used to describe the reaction pathway for the process. The Hterminated silylene-saturated surface formed by adsorption and desorption of disilene is thermally stable and passive to further Si2H6 exposure. ArF or KrF laser pulses (≅20 ns) are used to desorb H, following a Si2H6 exposure, and the growth cycle is repeated until the desired film thickness is obtained. At Ts < 180 °C, the growth process becomes rate limited by the surface dissociation step and R decreases exponentially as a function of 1/Ts with an activation energy of ≅0.5 eV. At Ts > 400 °C, H is thermally desorbed and pyrolytic growth competes with ALE. Transmission electron micrographs together with selected-area electron diffraction patterns show that the ALE films are epitaxial layers with no observed extended defects or strain.

Theoretical evaluation of film growth rate during atomic layer epitaxy

2000 ◽  
Vol 158 (1-2) ◽  
pp. 81-91 ◽  
Author(s):  
Hyung-Sang Park ◽  
Jae-Sik Min ◽  
Jung-Wook Lim ◽  
Sang-Won Kang
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Theoretical Evaluation ◽  
Film Growth Rate

Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

2005 ◽  
Vol 50 (20) ◽  
pp. 4041-4047 ◽  
Author(s):  
W. Zhu ◽  
J.Y. Yang ◽  
X.H. Gao ◽  
S.Q. Bao ◽  
X.A. Fan ◽  
...  
Keyword(s):  
Thin Film ◽  
Bismuth Telluride ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy

Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy

2018 ◽  
Vol 36 (5) ◽  
pp. 051503 ◽  
Author(s):  
David R. Boris ◽  
Virginia R. Anderson ◽  
Neeraj Nepal ◽  
Scooter D. Johnson ◽  
Zachary R. Robinson ◽  
...  
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Nitride Film ◽  
Plasma Properties

Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M=Ni, Cu, Pt) precursors

2000 ◽  
Vol 157 (3) ◽  
pp. 151-158 ◽  
Author(s):  
Mikko Utriainen ◽  
Minna Kröger-Laukkanen ◽  
Leena-Sisko Johansson ◽  
Lauri Niinistö
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Atomic Layer Epitaxy ◽  
Metallic Thin Film

Atomic Layer Epitaxy of GaAs on Si by Mocvd

1989 ◽  
Vol 145 ◽  
Author(s):  
N.H. Karam ◽  
V.E. Haven ◽  
S.M. Vernon ◽  
J.C. Tran ◽  
N.A. El-Masry
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Deposition Technique ◽  
Nucleation Layer ◽  
Selective Area Epitaxy ◽  
Si Substrates ◽  
Gaas On Si ◽  
Gaas Films ◽  
Si Films

AbstractEpitaxial GaAs films have been deposited on Si substrates using Atomic Layer Epitaxy (ALE) for the first time. This has been achieved in a SPI-MO CVD™ 450 reactor especially modified foroALE. After an initial high temperature bakeout, a nucleation layer 100-300 Å thick was deposited by ALE. Film growth was then resumed by conventional MOCVD to achieve the desired film thickness. The surface morphologies of the deposited films were found to be comparable to current state of the art conventional GaAs on Si films deposited by the two-step growth process in the same reactor.Selective area epitaxy of GaAs on Si has also been achieved on Si02-coated and patterned Si wafers. The standard two-step deposition technique resulted in epitaxial growth in the patterned windows and poly-GaAs on the oxide mask, while ALE growth resulted in deposition only in the etched windows with no poly-growth on the oxide mask. We will report on the potential of this new deposition technique in producing high quality GaAs-on-Si films.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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