Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy

2018 ◽  
Vol 36 (5) ◽  
pp. 051503 ◽  
Author(s):  
David R. Boris ◽  
Virginia R. Anderson ◽  
Neeraj Nepal ◽  
Scooter D. Johnson ◽  
Zachary R. Robinson ◽  
...  
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Nitride Film ◽  
Plasma Properties

Comparative Study on in-situ Ellipsometric Monitoring of III-Nitride Film Growth via Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940020
Author(s):  
Adnan Mohammad ◽  
Deepa Shukla ◽  
Saidjafarzoda Ilhom ◽  
Brian Willis ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Rf Plasma ◽  
Nitride Film ◽  
The Impact

In this paper a comparative in-situ ellipsometric analysis is carried out on plasma-assisted ALD-grown III-nitride (AlN, GaN, and InN) films. The precursors used are TMA, TMG, and TMI for AlN, GaN, and InN respectively, while Ar is used as purge gas. For all of the films N2/H2/Ar plasma was used as the co-reactant. The work includes real-time in-situ monitored saturation curves, unit ALD cycle analysis, and >500 cycle film growth runs. In addition, the films are grown at different substrate temperatures to observe the impact of temperature not only on the growth rate but on how it influenced the precursor chemisorption, ligand removal, and nitrogen incorporation surface reactions. All three nitride films confirm fairly linear growth character. The growth rate per cycle (GPC) for each film is also measured with respect to rf-plasma power to obtain the surface saturation conditions during ALD growth. The real-time in-situ monitoring of the film growth can really be beneficial to understand the atomic layer growth and film formation in each individual ALD cycle.

scholarly journals Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

2019 ◽  
Vol 37 (6) ◽  
pp. 060909 ◽  
Author(s):  
David R. Boris ◽  
Virginia D. Wheeler ◽  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Charles R. Eddy ◽  
...  
Keyword(s):  
Oxide Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Plasma Properties

In situ study of a strontium β-diketonate precursor for thin-film growth by atomic layer epitaxy

1994 ◽  
Vol 4 (8) ◽  
pp. 1239-1244 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Andres Jaek ◽  
Markku Leskelä ◽  
Lauri Niinistö
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Atomic Layer Epitaxy ◽  
In Situ Study

Mechanistic details of atomic layer deposition (ALD) processes for metal nitride film growth

2008 ◽  
Vol 281 (1-2) ◽  
pp. 35-43 ◽  
Author(s):  
Hugo Tiznado ◽  
Menno Bouman ◽  
Byung-Chang Kang ◽  
Ilkeun Lee ◽  
Francisco Zaera
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Nitride Film ◽  
Metal Nitride ◽  
Layer Deposition

UV Photostimulated Si Atomic-Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
D. Lubben ◽  
R. Tsu ◽  
T. R. Bramblett ◽  
J. E. Greene
Keyword(s):  
Film Growth ◽  
Laser Energy ◽  
Reaction Pathway ◽  
Atomic Layer ◽  
Laser Pulses ◽  
Growth Cycle ◽  
Atomic Layer Epitaxy ◽  
Extended Defects ◽  
Wide Range ◽  
Si Films

ABSTRACTSingle-crystal Si films have been grown on Si(001)2×1 substrates by UVphotostimulated atomic-layer epitaxy (ALE) from Si2H6. The ALE deposition rate R per growth cycle remains constant at 0.4 monolayers (ML) over a wide range of deposition parameters: growth temperature (Ts= 180–400 °C), Si2H6 exposure (peak pressure during gas pulse = 0.1−5 mTorr), laser energy density ( = 250–450 mJ cm−2 where is determined by Ts), and number of UV laser pulses per cycle. A film growth mocrel, based upon the results of the present deposition experiments and Monte Carlo simulations, together with our previous adsorption/desorption measurements, Is used to describe the reaction pathway for the process. The Hterminated silylene-saturated surface formed by adsorption and desorption of disilene is thermally stable and passive to further Si2H6 exposure. ArF or KrF laser pulses (≅20 ns) are used to desorb H, following a Si2H6 exposure, and the growth cycle is repeated until the desired film thickness is obtained. At Ts < 180 °C, the growth process becomes rate limited by the surface dissociation step and R decreases exponentially as a function of 1/Ts with an activation energy of ≅0.5 eV. At Ts > 400 °C, H is thermally desorbed and pyrolytic growth competes with ALE. Transmission electron micrographs together with selected-area electron diffraction patterns show that the ALE films are epitaxial layers with no observed extended defects or strain.

Theoretical evaluation of film growth rate during atomic layer epitaxy

2000 ◽  
Vol 158 (1-2) ◽  
pp. 81-91 ◽  
Author(s):  
Hyung-Sang Park ◽  
Jae-Sik Min ◽  
Jung-Wook Lim ◽  
Sang-Won Kang
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Theoretical Evaluation ◽  
Film Growth Rate
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