Atomic Layer Epitaxy of GaAs on Si by Mocvd

1989 ◽  
Vol 145 ◽  
Author(s):  
N.H. Karam ◽  
V.E. Haven ◽  
S.M. Vernon ◽  
J.C. Tran ◽  
N.A. El-Masry
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Deposition Technique ◽  
Nucleation Layer ◽  
Selective Area Epitaxy ◽  
Si Substrates ◽  
Gaas On Si ◽  
Gaas Films ◽  
Si Films

AbstractEpitaxial GaAs films have been deposited on Si substrates using Atomic Layer Epitaxy (ALE) for the first time. This has been achieved in a SPI-MO CVD™ 450 reactor especially modified foroALE. After an initial high temperature bakeout, a nucleation layer 100-300 Å thick was deposited by ALE. Film growth was then resumed by conventional MOCVD to achieve the desired film thickness. The surface morphologies of the deposited films were found to be comparable to current state of the art conventional GaAs on Si films deposited by the two-step growth process in the same reactor.Selective area epitaxy of GaAs on Si has also been achieved on Si02-coated and patterned Si wafers. The standard two-step deposition technique resulted in epitaxial growth in the patterned windows and poly-GaAs on the oxide mask, while ALE growth resulted in deposition only in the etched windows with no poly-growth on the oxide mask. We will report on the potential of this new deposition technique in producing high quality GaAs-on-Si films.

High Quality GaAs on Si by Selective Area Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
M. Lingunis ◽  
...  
Keyword(s):  
Atomic Layer ◽  
High Quality ◽  
Selective Area Epitaxy ◽  
Defect Reduction ◽  
Gaas On Si ◽  
Reduction Techniques ◽  
Selective Area ◽  
Gaas Films ◽  
Oxide Removal ◽  
Si Films

ABSTRACTSelective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si wafers. SE was found to eliminate wafer warpage, reduce film cracking and reduce the tensile stresses for islands less than 200 µm/side. Complete stress relief has been achieved in 10 µm/side islands after oxide removal. Defect reduction techniques have been employed resulting in two orders of magnitude reduction in the dislocation density and excellent surface morphologies. This paper addresses the potential of SE, by the above techniques in improving the quality of the GaAs on Si films.

Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE

1991 ◽  
Vol 107 (1-4) ◽  
pp. 129-135 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
E.H. Lingunis ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Selective Area Epitaxy ◽  
Gaas On Si ◽  
Selective Area

UV Photostimulated Si Atomic-Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
D. Lubben ◽  
R. Tsu ◽  
T. R. Bramblett ◽  
J. E. Greene
Keyword(s):  
Film Growth ◽  
Laser Energy ◽  
Reaction Pathway ◽  
Atomic Layer ◽  
Laser Pulses ◽  
Growth Cycle ◽  
Atomic Layer Epitaxy ◽  
Extended Defects ◽  
Wide Range ◽  
Si Films

ABSTRACTSingle-crystal Si films have been grown on Si(001)2×1 substrates by UVphotostimulated atomic-layer epitaxy (ALE) from Si2H6. The ALE deposition rate R per growth cycle remains constant at 0.4 monolayers (ML) over a wide range of deposition parameters: growth temperature (Ts= 180–400 °C), Si2H6 exposure (peak pressure during gas pulse = 0.1−5 mTorr), laser energy density ( = 250–450 mJ cm−2 where is determined by Ts), and number of UV laser pulses per cycle. A film growth mocrel, based upon the results of the present deposition experiments and Monte Carlo simulations, together with our previous adsorption/desorption measurements, Is used to describe the reaction pathway for the process. The Hterminated silylene-saturated surface formed by adsorption and desorption of disilene is thermally stable and passive to further Si2H6 exposure. ArF or KrF laser pulses (≅20 ns) are used to desorb H, following a Si2H6 exposure, and the growth cycle is repeated until the desired film thickness is obtained. At Ts < 180 °C, the growth process becomes rate limited by the surface dissociation step and R decreases exponentially as a function of 1/Ts with an activation energy of ≅0.5 eV. At Ts > 400 °C, H is thermally desorbed and pyrolytic growth competes with ALE. Transmission electron micrographs together with selected-area electron diffraction patterns show that the ALE films are epitaxial layers with no observed extended defects or strain.

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers

1990 ◽  
Vol 106 (2-3) ◽  
pp. 421-425 ◽  
Author(s):  
Norio Hayafuji ◽  
Motoharu Miyashita ◽  
Hisao Kumabe ◽  
Toshio Murotani
Keyword(s):  
Large Scale ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Atomic Layer Epitaxy ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Initial Buffer

A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 346-351 ◽  
Author(s):  
N. Ohtsuka ◽  
K. Kitahara ◽  
M. Ozeki ◽  
K. Kodama
Keyword(s):  
Atomic Layer ◽  
Buffer Layers ◽  
Atomic Layer Epitaxy ◽  
Gaas On Si

Area Selective Atomic Layer Deposition by Soft Lithography

2006 ◽  
Vol 917 ◽  
Author(s):  
Rong Chen ◽  
David W. Porter ◽  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
Stacey F. Bent
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Soft Lithography ◽  
Film Growth ◽  
Atomic Layer ◽  
Hydroxyl Groups ◽  
Contact Printing ◽  
Si Substrates ◽  
Layer Deposition ◽  
Selective Surface Modification

AbstractArea selective HfO2 thin film growth through atomic layer deposition (ALD) has been achieved on octadecyltrichlorosilane (ODTS) patterned Si substrates. Patterned hydrophobic self-assembled monolayers (SAMs) were first transferred to Si substrates by micro-contact printing. Using hafnium-tetrachloride or tetrakis(dimethylamido) hafnium(IV) and water as ALD precursors, amorphous HfO2 layers were then grown selectively on the SAM-free regions of the surface where native hydroxyl groups nucleate growth from the vapor phase. The HfO2 pattern was readily observed through scanning electron microscopy and scanning Auger imaging, demonstrating that soft lithography is a simple and promising method to achieve area selective ALD. To evaluate the selectivity, the resolution of the soft lithography based method was compared with that of area selective ALD of HfO2 by selective surface modification of patterned silicon oxide obtained using long-time SAM exposure. It was found that the selective surface modification showed much higher spatial resolution and selectivity, an observation consistent with previous studies indicating that highly ordered and densely packed ODTS films were important to achieve complete deactivation.

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