Electronic structure of molecular beam epitaxy grown CaF2 on Si(111)

Author(s):  
U. O. Karlsson
2019 ◽  
Vol 61 (12) ◽  
pp. 2282-2285
Author(s):  
S. N. Timoshnev ◽  
A. M. Mizerov ◽  
G. V. Benemanskaya ◽  
S. A. Kukushkin ◽  
A. D. Buravlev

2019 ◽  
Vol 28 (10) ◽  
pp. 107307 ◽  
Author(s):  
Xue Zhou ◽  
Zeyu Jiang ◽  
Kenan Zhang ◽  
Wei Yao ◽  
Mingzhe Yan ◽  
...  

2001 ◽  
Vol 79 (17) ◽  
pp. 2749-2751 ◽  
Author(s):  
K. V. Smith ◽  
E. T. Yu ◽  
C. R. Elsass ◽  
B. Heying ◽  
J. S. Speck

RSC Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 423-428 ◽  
Author(s):  
Pei-Yu Chuang ◽  
Shu-Hsuan Su ◽  
Cheong-Wei Chong ◽  
Yi-Fan Chen ◽  
Yu-Heng Chou ◽  
...  

Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE).


1999 ◽  
Vol 59 (15) ◽  
pp. 10268-10275 ◽  
Author(s):  
M. Hetterich ◽  
Ch. Märkle ◽  
A. Dinger ◽  
M. Grün ◽  
C. Klingshirn

Author(s):  
П.В. Середин ◽  
А.С. Леньшин ◽  
Д.С. Золотухин ◽  
Д.Л. Голощапов ◽  
А.М. Мизеров ◽  
...  

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.


APL Materials ◽  
2018 ◽  
Vol 6 (2) ◽  
pp. 026601 ◽  
Author(s):  
Shujie Tang ◽  
Chaofan Zhang ◽  
Chunjing Jia ◽  
Hyejin Ryu ◽  
Choongyu Hwang ◽  
...  

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Kota Hanzawa ◽  
Yuta Yamaguchi ◽  
Yukiko Obata ◽  
Satoru Matsuishi ◽  
Hidenori Hiramatsu ◽  
...  

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