Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (17) ◽  
pp. 2749-2751 ◽  
Author(s):  
K. V. Smith ◽  
E. T. Yu ◽  
C. R. Elsass ◽  
B. Heying ◽  
J. S. Speck
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

2019 ◽  
Vol 61 (12) ◽  
pp. 2282-2285
Author(s):  
S. N. Timoshnev ◽  
A. M. Mizerov ◽  
G. V. Benemanskaya ◽  
S. A. Kukushkin ◽  
A. D. Buravlev
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Electronic structure of molecular beam epitaxy grown $1{{\rm{T}}}^{{\prime} }$-MoTe 2 film and strain effect

2019 ◽  
Vol 28 (10) ◽  
pp. 107307 ◽  
Author(s):  
Xue Zhou ◽  
Zeyu Jiang ◽  
Kenan Zhang ◽  
Wei Yao ◽  
Mingzhe Yan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Effect

scholarly journals Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

RSC Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 423-428 ◽  
Author(s):  
Pei-Yu Chuang ◽  
Shu-Hsuan Su ◽  
Cheong-Wei Chong ◽  
Yi-Fan Chen ◽  
Yu-Heng Chou ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Topological Insulator ◽  
Molecular Beam ◽  
Ti Films

Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE).

Electronic structure and optical properties of ultrathin CdS/ZnS quantum wells grown by molecular-beam epitaxy

1999 ◽  
Vol 59 (15) ◽  
pp. 10268-10275 ◽  
Author(s):  
M. Hetterich ◽  
Ch. Märkle ◽  
A. Dinger ◽  
M. Grün ◽  
C. Klingshirn
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam

scholarly journals Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии

2019 ◽  
Vol 53 (7) ◽  
pp. 1010
Author(s):  
П.В. Середин ◽  
А.С. Леньшин ◽  
Д.С. Золотухин ◽  
Д.Л. Голощапов ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Molecular Beam ◽  
Diameter Distribution ◽  
Structure Morphology ◽  
Nanoporous Si ◽  
Pl Intensity

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

scholarly journals Electronic structure of monolayer 1T′-MoTe2 grown by molecular beam epitaxy

APL Materials ◽  
2018 ◽  
Vol 6 (2) ◽  
pp. 026601 ◽  
Author(s):  
Shujie Tang ◽  
Chaofan Zhang ◽  
Chunjing Jia ◽  
Hyejin Ryu ◽  
Choongyu Hwang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Kota Hanzawa ◽  
Yuta Yamaguchi ◽  
Yukiko Obata ◽  
Satoru Matsuishi ◽  
Hidenori Hiramatsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
Sign in / Sign up

Export Citation Format

Share Document