scholarly journals Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Kota Hanzawa ◽  
Yuta Yamaguchi ◽  
Yukiko Obata ◽  
Satoru Matsuishi ◽  
Hidenori Hiramatsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Electronic Structure and Total-Energy of FeSi2 Pseudomorphic Phases

1993 ◽  
Vol 320 ◽  
Author(s):  
Leo Miglio ◽  
Giovanna Malegori
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Total Energy ◽  
Density Of States ◽  
Molecular Beam ◽  
Tight Binding ◽  
Binding Parameters ◽  
Annealing Temperatures ◽  
Β Phase

ABSTRACTBy fitting orthogonal tight binding parameters to the ab inlio bands of Calciumfluorite FeSi2 (γ-phase) and Cesiumcloride FeSi, we calculate the electronic structure (bands and density of states) and the total-energy of the semiconductive, orthorombic β-phase and the disordered, cubic one. The latter, the γ and the β nfigurations, have been recently observed at different annealing temperatures in thin films grown on Si (111) by Molecular Beam Epitaxy. The transferability of our method among different phases allows for a comparison of the cohesive energy curves which, in turn, supplies an interpretation of the relative stability and the growth kinetics.

scholarly journals Tuning the Electronic Structure of Sr 2 IrO 4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

2015 ◽  
Vol 32 (5) ◽  
pp. 057402 ◽  
Author(s):  
Ming-Ying Li ◽  
Zheng-Tai Liu ◽  
Hai-Feng Yang ◽  
Jia-Lin Zhao ◽  
Qi Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electronic Doping

scholarly journals Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 54-57 ◽  
Author(s):  
J.F. Xu ◽  
P.M. Thibado ◽  
C. Awo-Affouda ◽  
R. Moore ◽  
V.P. LaBella
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atmospheric Oxygen ◽  
Mn Doped

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

As-Grown Superconducting SmFeAs(O,F) Thin Films by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (5) ◽  
pp. 053101 ◽  
Author(s):  
Shinya Ueda ◽  
Soichiro Takeda ◽  
Shiro Takano ◽  
Michio Naito
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

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