scholarly journals Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy

2012 ◽  
Vol 112 (11) ◽  
pp. 113718 ◽  
Author(s):  
D. Shin ◽  
J. S. Foord ◽  
R. G. Egdell ◽  
A. Walsh
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Oxygen Plasma ◽  
Molecular Beam

Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 1844-1849 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
Y. Liang ◽  
G. C. Dunham ◽  
S. A. Chambers
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Epitaxial Films ◽  
Low Resistivity ◽  
Small Grains

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).

scholarly journals Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Kota Hanzawa ◽  
Yuta Yamaguchi ◽  
Yukiko Obata ◽  
Satoru Matsuishi ◽  
Hidenori Hiramatsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Electronic Structure and Total-Energy of FeSi2 Pseudomorphic Phases

1993 ◽  
Vol 320 ◽  
Author(s):  
Leo Miglio ◽  
Giovanna Malegori
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Total Energy ◽  
Density Of States ◽  
Molecular Beam ◽  
Tight Binding ◽  
Binding Parameters ◽  
Annealing Temperatures ◽  
Β Phase

ABSTRACTBy fitting orthogonal tight binding parameters to the ab inlio bands of Calciumfluorite FeSi2 (γ-phase) and Cesiumcloride FeSi, we calculate the electronic structure (bands and density of states) and the total-energy of the semiconductive, orthorombic β-phase and the disordered, cubic one. The latter, the γ and the β nfigurations, have been recently observed at different annealing temperatures in thin films grown on Si (111) by Molecular Beam Epitaxy. The transferability of our method among different phases allows for a comparison of the cohesive energy curves which, in turn, supplies an interpretation of the relative stability and the growth kinetics.

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

2008 ◽  
Vol 11 (5) ◽  
pp. B76 ◽  
Author(s):  
Z. Q. Yu ◽  
Satyanarayana V. N. T. Kuchibhatla ◽  
L. V. Saraf ◽  
O. A. Marina ◽  
C. M. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Doped Ceria

Growth Study of New Complex Oxide PbOxSe1–x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 2253-2258 ◽  
Author(s):  
Lance L. McDowell ◽  
Jijun Qiu ◽  
Binbin Weng ◽  
Zhisheng Shi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Complex Oxide ◽  
Growth Study

scholarly journals Tuning the Electronic Structure of Sr 2 IrO 4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

2015 ◽  
Vol 32 (5) ◽  
pp. 057402 ◽  
Author(s):  
Ming-Ying Li ◽  
Zheng-Tai Liu ◽  
Hai-Feng Yang ◽  
Jia-Lin Zhao ◽  
Qi Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electronic Doping
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