scholarly journals Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

RSC Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 423-428 ◽  
Author(s):  
Pei-Yu Chuang ◽  
Shu-Hsuan Su ◽  
Cheong-Wei Chong ◽  
Yi-Fan Chen ◽  
Yu-Heng Chou ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Topological Insulator ◽  
Molecular Beam ◽  
Ti Films

Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE).

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates

2016 ◽  
Vol 119 (16) ◽  
pp. 165303 ◽  
Author(s):  
Celso I. Fornari ◽  
Paulo H. O. Rappl ◽  
Sérgio L. Morelhão ◽  
Eduardo Abramof
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Topological Insulator ◽  
Molecular Beam

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

2019 ◽  
Vol 61 (12) ◽  
pp. 2282-2285
Author(s):  
S. N. Timoshnev ◽  
A. M. Mizerov ◽  
G. V. Benemanskaya ◽  
S. A. Kukushkin ◽  
A. D. Buravlev
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Electronic structure of molecular beam epitaxy grown $1{{\rm{T}}}^{{\prime} }$-MoTe 2 film and strain effect

2019 ◽  
Vol 28 (10) ◽  
pp. 107307 ◽  
Author(s):  
Xue Zhou ◽  
Zeyu Jiang ◽  
Kenan Zhang ◽  
Wei Yao ◽  
Mingzhe Yan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Effect

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (17) ◽  
pp. 2749-2751 ◽  
Author(s):  
K. V. Smith ◽  
E. T. Yu ◽  
C. R. Elsass ◽  
B. Heying ◽  
J. S. Speck
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Molecular-beam epitaxy of topological insulator Bi2Se3(111) and (221) thin films

2013 ◽  
Vol 22 (6) ◽  
pp. 068101 ◽  
Author(s):  
Mao-Hai Xie ◽  
Xin Guo ◽  
Zhong-Jie Xu ◽  
Wing-Kin Ho
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Topological Insulator ◽  
Molecular Beam

Electronic structure and optical properties of ultrathin CdS/ZnS quantum wells grown by molecular-beam epitaxy

1999 ◽  
Vol 59 (15) ◽  
pp. 10268-10275 ◽  
Author(s):  
M. Hetterich ◽  
Ch. Märkle ◽  
A. Dinger ◽  
M. Grün ◽  
C. Klingshirn
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam
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