Radio-frequency biased microwave plasma etching technique: A method to increase SiO2 etch rate

1985 ◽  
Vol 3 (4) ◽  
pp. 1025 ◽  
Author(s):  
Keizo Suzuki
Keyword(s):  
Radio Frequency ◽  
Plasma Etching ◽  
Etch Rate ◽  
Microwave Plasma ◽  
Etching Technique

High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2641-2643 ◽  
Author(s):  
Haruo Shindo ◽  
Tetsuro Hashimoto ◽  
Fumitake Amasaki ◽  
Yasuhiro Horiike
Keyword(s):  
Magnetic Fields ◽  
Plasma Etching ◽  
Etch Rate ◽  
Microwave Plasma ◽  
High Magnetic Fields ◽  
High Etch Rate

Etching of polymers in microwave/radio-frequency O2–CF4 plasma

1991 ◽  
Vol 69 (3-4) ◽  
pp. 202-206 ◽  
Author(s):  
B. Lamontagne ◽  
O. M. Küttel ◽  
M. R. Wertheimer
Keyword(s):  
Radio Frequency ◽  
Plasma Etching ◽  
Etch Rate ◽  
Marked Effect ◽  
Polymer Structure ◽  
Rf Plasma ◽  
Self Bias ◽  
Microwave Radio ◽  
Commercial Polymers ◽  
Second Peak

We have studied O2–CF4 plasma etching of commercial polymers, particularly KaptonR polyimide, using a reactor in which the plasma can be excited by radio-frequency (rf, 13.56 MHz), microwave power (MW, 2.45 GHz), or mixed frequency (MW/rf) excitation. For the case of rf plasma etching of polyimide, a marked effect of dc self-bias voltage Vb on the etch rate R has been observed; Vb is found to vary systematically with pressure and with CF4 concentration in the etch gas, [CF4]. Beside the well-documented maximum in R at low-[CF4] values, the measurement of ion flux allows us to attribute a second peak in R (near [CF4] = 65%) to ion bombardment. We also report observations regarding the dependence of R on polymer structure.

Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

CrystEngComm ◽  
2021 ◽  
Author(s):  
Jinying Yu ◽  
Xianglong Yang ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
Xiwei Wang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma ◽  
Etching Technique

A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC.

Double-Step Plasma Etching for SiO2 Microcantilever Release

2011 ◽  
Vol 254 ◽  
pp. 140-143
Author(s):  
Rosminazuin A. Rahim ◽  
Badariah Bais ◽  
Majlis Burhanuddin Yeop
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Anisotropic Etching ◽  
Chamber Pressure ◽  
Double Step ◽  
Release Process ◽  
Etching Technique ◽  
Isotropic Etching ◽  
Releasing Process

In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum parameters yield lateral etch rate of about 5 μm/min and vertical etch rate of about 8 μm/min. Two etching methods have been considered in this study. The first method employs only the isotropic etching to realize the microcantilever release while the second method utilizes both the anisotropic etching and the isotropic etching. For the second method, the process starts with the anisotropic etching from the deep reactive ion etching (DRIE) system which is then followed by the isotropic etching to complete the microcantilever releasing process. The purpose of the anisotropic etching is to create an etching window for the subsequent isotropic etching process. By using double-step etching method which combines both isotropic and anisotropic plasma etching for the microcantilever release process, the releasing process of suspended microcantilever is significantly improved.

THE MODIFICATION OF PAPER INDUCED BY RADIO FREQUENCY AND MICROWAVE PLASMA TREATMENT

2007 ◽  
Vol 11 (4) ◽  
pp. 593-600
Author(s):  
V. V. Azharonok ◽  
I. I. Filatova ◽  
A. P. Dostanko ◽  
S. V. Bordusov ◽  
Yu. S. Shynkevich
Keyword(s):  
Radio Frequency ◽  
Plasma Treatment ◽  
Microwave Plasma

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

2000 ◽  
Vol 657 ◽  
Author(s):  
Junting Liu ◽  
Nikolay I. Nemchuk ◽  
Dieter G. Ast ◽  
J. Gregory Couillard
Keyword(s):  
Plasma Etching ◽  
Glass Ceramic ◽  
Etch Rate ◽  
Glass Ceramics ◽  
Similar Rate ◽  
Optical Mems ◽  
Glass Substrates ◽  
Rate Limiting Step ◽  
Green Glass ◽  
Etched Surface

ABSTRACTMicro-machined transparent components are of interest for optical MEMS and miniaturized biological systems. The glass ceramic GC6 developed by Corning is optically transparent, has a softening point in excess of 900°C, and a thermal expansion coefficient matched to silicon. These properties make it useful for the construction of devices that combine thin film silicon electronics with MEMS systems.Both the ceramic precursor (green glass) and the glass ceramic etch at a similar rate, about 1/3 to 1/4 of that of SiO2 etched under the same conditions, indicating that chemistry rather than microstructure control the etch rate. The cleaning steps used to clean the glass precursor profoundly influence the degree of surface roughness that develops during subsequent plasma etching. In glass ceramics, the morphology of plasma etched surface is always very smooth and independent of the cleaning steps used. Assuming that the removal of spinel crystals is the rate limiting step in plasma etching glass ceramics can explain this observation.

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

2021 ◽  
Vol 39 (5) ◽  
pp. 053002
Author(s):  
Clint D. Frye ◽  
Scott B. Donald ◽  
Catherine Reinhardt ◽  
Lars F. Voss ◽  
Sara E. Harrison
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Carrier Wafer
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