Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

CrystEngComm ◽  
2021 ◽  
Author(s):  
Jinying Yu ◽  
Xianglong Yang ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
Xiwei Wang ◽  
...  

A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC.

1986 ◽  
Vol 5 (1-4) ◽  
pp. 375-386 ◽  
Author(s):  
N.J. Chou ◽  
J. Parazsczak ◽  
E. Babich ◽  
Y.S. Chaug ◽  
R. Goldblatt

1986 ◽  
Vol 5 (1-4) ◽  
pp. 363-374 ◽  
Author(s):  
J.E. Heidenreich ◽  
J.R. Paraszczak ◽  
M. Moisan ◽  
G. Sauve

2019 ◽  
Vol 7 (24) ◽  
pp. 14483-14488 ◽  
Author(s):  
Zhijuan Liu ◽  
Chung-Li Dong ◽  
Yu-Cheng Huang ◽  
Jiajie Cen ◽  
Haotian Yang ◽  
...  

Herein, we effectively modulate the electronic structure of Co3Fe layered double hydroxides (LDHs) by F-doping using a CHF3-plasma etching technique.


1984 ◽  
Author(s):  
Ken Ninomiya ◽  
Keizo Suzuki ◽  
Shigeru Nishimatsu

1982 ◽  
Vol 129 (12) ◽  
pp. 2764-2769 ◽  
Author(s):  
K. Suzuki ◽  
S. Okudaira ◽  
S. Nishimatsu ◽  
K. Usami ◽  
I. Kanomata

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