Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment
A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC.
1985 ◽
Vol 3
(4)
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pp. 1025
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Keyword(s):
1986 ◽
Vol 5
(1-4)
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pp. 375-386
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1986 ◽
Vol 5
(1-4)
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pp. 363-374
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2019 ◽
Vol 7
(24)
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pp. 14483-14488
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2003 ◽
1982 ◽
Vol 129
(12)
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pp. 2764-2769
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