Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]

1988 ◽  
Vol 53 (17) ◽  
pp. 1665-1666 ◽  
Author(s):  
J. Pelletier
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Microwave Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching

Low‐temperature reactive ion etching and microwave plasma etching of silicon

1988 ◽  
Vol 52 (8) ◽  
pp. 616-618 ◽  
Author(s):  
Shinichi Tachi ◽  
Kazunori Tsujimoto ◽  
Sadayuki Okudaira
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Microwave Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching

Plasma Etching of Silicon at a High Flow and a High Pressure of NF3 in Reactive Ion Etching

2019 ◽  
Vol 74 (12) ◽  
pp. 1135-1139
Author(s):  
Hee-Tae Kwon ◽  
Woo-Jae Kim ◽  
Gi-Won Shin ◽  
Hwan-Hee Lee ◽  
Tae-Hyun Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Plasma Etching ◽  
Reactive Ion Etching ◽  
High Flow ◽  
Ion Etching

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7650-7654 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Hiroshi Kanbe
Keyword(s):  
Low Temperature ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Etching
Sign in / Sign up

Export Citation Format

Share Document