Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride

2002 ◽  
Vol 91 (5) ◽  
pp. 3452-3458 ◽  
Author(s):  
Masafumi Ito ◽  
Kiyoshi Kamiya ◽  
Masaru Hori ◽  
Toshio Goto
2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin

2021 ◽  
Vol 255 ◽  
pp. 10003
Author(s):  
Kore Hasse ◽  
Detlef Kip ◽  
Christian Kränkel

We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.


2000 ◽  
Vol 115 (12) ◽  
pp. 683-686 ◽  
Author(s):  
X.C Wu ◽  
W.H Song ◽  
B Zhao ◽  
W.D Huang ◽  
M.H Pu ◽  
...  

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