Deposition and 1.54 μm Er3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 with concurrent sputtering of erbium

1999 ◽  
Vol 17 (6) ◽  
pp. 3230-3234 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim
Keyword(s):  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Luminescent Properties ◽  
Silicon Thin Films ◽  
Erbium Doped ◽  
Hydrogenated Amorphous ◽  
Resonance Plasma

Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

1997 ◽  
Vol 486 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim ◽  
Se-Young Seo ◽  
Choochon Lee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Composition Dependence ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Resonance Plasma

AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

Effects of Composition on the Microstructures and Optical Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
Lih-Hsiung Chan ◽  
Wei-Zen Chou ◽  
Lih-Hsin Chou
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Resonance Plasma

ABSTRACTHydrogenated amorphous silicon carbide films (a -SiC:H) were prepared from CH4, SiH4, and Ar mixtures by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition (ECR PCVD). The deposition of the thin films was proceeded with the following optimized conditions; microwave power: 900W, Ar flux : 90sccm, and total flux: 113.4 sccm. The substrate temperature was around 100∼120°C during deposition. For comparisons, the relative flux ratio of methane to silane was varied to produce thin films of different compositions to investigate the relationships between the associated compositions of films and their corresponding microstructures and optical properties. Moreover, both film's microstructures and their optical properties were analyzed to find out as to how they are interrelated. Furthermore, the surface morphology and amorphous microstructures were confirmed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM), respectively. And, x-ray Photoelectron Spectroscopy (XPS) was employed to study the relative atomic ratio of C to Si along with the bonding conditions in the thin films. Finally, the Hydrogen concentration and the amounts of C-H and Si-H bonds were determined by Fourier transform infrared spectroscopy(FTIR), while the optical properties were measured by optical spectrophotometer.

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