Low temperature polycrystalline silicon film formation with and without charged species in an electron cyclotron resonance SiH4/H2 plasma-enhanced chemical vapor deposition

1999 ◽  
Vol 17 (5) ◽  
pp. 2542-2545 ◽  
Author(s):  
Ryoichi Nozawa ◽  
Kazuya Murata ◽  
Masafumi Ito ◽  
Masaru Hori ◽  
Toshio Goto
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Formation ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Charged Species ◽  
Polycrystalline Silicon Film

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250°C

1997 ◽  
Vol 472 ◽  
Author(s):  
Yeu-Long Jiang ◽  
Ruo-Yu Wang ◽  
Huey-Liang Hwang ◽  
Tri-Rung Yew
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Dopant Concentration ◽  
Chemical Vapor ◽  
Silicon Thin Films

AbstractThe phosphorus doped polycrystalline silicon thin films were grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at 250°C. The doping gas PH3 was in-situ added with SiH4 gas during the films deposition. All films were deposited with 90% hydrogen dilution ratio. The resistivity of the films is varied from 0.2 to 7Ω-cm and decrease as the PH3/SiH4 gas ratio increase from (3/100 to 7/100). From the SIMS data, the doping concentration is all about 1020cm-3. The activation energy is decreased from 0.35 eV to 0.12 eV as the dopant concentration increased from 0.8×10 20cm-3 to 4.7×10 20cm-3. From the Hall measurements, the carrier mobility is about 2∼4 cm2/V. sec, and the carrier concentration is the 0.5∼1% of the dopant concentration. The gain boundary trap density predicted by the trapping model is about 4×l013cm” 2-2

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