Establishing the relationship between process, structure, and properties of TiN films deposited by electron cyclotron resonance assisted reactive sputtering. I. Variations in hardness and roughness as a function of process parameters

1999 ◽  
Vol 17 (5) ◽  
pp. 2850-2858 ◽  
Author(s):  
Carl Carney ◽  
Delcie Durham
Keyword(s):  
Process Parameters ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Sputtering ◽  
Electron Cyclotron ◽  
Structure And Properties ◽  
Tin Films ◽  
Process Structure ◽  
The Relationship

Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
Sung-Jae Joo ◽  
Ki-Hyun Hwang ◽  
Seok-Hee Hwang ◽  
Euijoon Yoon ◽  
Ki-Woong Whang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Epitaxial Layers

ABSTRACTDislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

Long Electron Cyclotron Resonance Plasma Source for Reactive Sputtering

1996 ◽  
Vol 35 (Part 1, No. 10) ◽  
pp. 5495-5500 ◽  
Author(s):  
Toshiaki Yasui ◽  
Kiyotaka Nakase ◽  
Hirokazu Tahara ◽  
Takao Yoshikawa
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Sputtering ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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