Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters

2001 ◽  
Vol 19 (1) ◽  
pp. 9-16 ◽  
Author(s):  
A. Raveh ◽  
J. Brewer ◽  
E. A. Irene
Keyword(s):  
Radio Frequency ◽  
Process Parameters ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Resonance Effect ◽  
Electron Cyclotron ◽  
Radio Frequency Plasma ◽  
Sio2 Films ◽  
Frequency Plasma

Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
Sung-Jae Joo ◽  
Ki-Hyun Hwang ◽  
Seok-Hee Hwang ◽  
Euijoon Yoon ◽  
Ki-Woong Whang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Epitaxial Layers

ABSTRACTDislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

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