Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry

1999 ◽  
Vol 17 (1) ◽  
pp. 144-149 ◽  
Author(s):  
S. M. Zhou ◽  
M. Hundhausen ◽  
T. Stark ◽  
L. Y. Chen ◽  
L. Ley
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

On the kinetics of platinum silicide formation

2011 ◽  
Vol 98 (8) ◽  
pp. 082102 ◽  
Author(s):  
Erik J. Faber ◽  
Rob A. M. Wolters ◽  
Jurriaan Schmitz
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Kinetics of silicide formation measured by in situ ramped resistance measurements

1996 ◽  
Vol 79 (8) ◽  
pp. 4087 ◽  
Author(s):  
E. G. Colgan ◽  
F. M. d’Heurle
Keyword(s):  
Silicide Formation ◽  
Kinetics Of

Influence of film structure on the dewetting kinetics of thin polymer films in the solvent annealing process

2016 ◽  
Vol 18 (24) ◽  
pp. 16310-16316 ◽  
Author(s):  
Huanhuan Zhang ◽  
Lin Xu ◽  
Yuqing Lai ◽  
Tongfei Shi
Keyword(s):  
Optical Microscopy ◽  
Polymer Films ◽  
Spectroscopic Ellipsometry ◽  
Film Structure ◽  
Annealing Process ◽  
Thin Polymer Films ◽  
Solvent Annealing ◽  
Thin Polymer ◽  
Kinetics Of

Combining spectroscopic ellipsometry with optical microscopy to in situ investigate the influence of a swollen film structure on its dewetting kinetics.

Kinetics of platinum silicide formation during rapid thermal processing

1992 ◽  
Vol 72 (5) ◽  
pp. 1833-1836 ◽  
Author(s):  
A. K. Pant ◽  
S. P. Murarka ◽  
C. Shepard ◽  
W. Lanford
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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