In Situ Reflectivity Measurement In A Rapid Isothermal Processor For Platinum Silicide Formation Kinetics Study

1990 ◽  
Author(s):  
Jean-Marie Dilhac ◽  
Christian Ganibal ◽  
Thierry Castan
Keyword(s):  
Kinetics Study ◽  
Silicide Formation ◽  
Reflectivity Measurement ◽  
Platinum Silicide ◽  
Formation Kinetics

Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

2016 ◽  
Vol 18 (42) ◽  
pp. 29435-29446 ◽  
Author(s):  
Zhuoran Wang ◽  
Samir Elouatik ◽  
George P. Demopoulos
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Formation Kinetics ◽  
Nano Crystalline ◽  
Multi Wavelength ◽  
Real Time Information ◽  
Kinetics Of ◽  
Time Information ◽  
Annealing Method

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

Fast in situ X-ray analysis of Ni silicide formation

2017 ◽  
Vol 254 (7) ◽  
pp. 1600859 ◽  
Author(s):  
Peter Zaumseil ◽  
Dirk Wolansky
Keyword(s):  
Silicide Formation ◽  
X Ray

In situ study of the growth kinetics and interfacial roughness during the first stages of nickel–silicide formation

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2253-2257 ◽  
Author(s):  
L. Ehouarne ◽  
M. Putero ◽  
D. Mangelinck ◽  
F. Nemouchi ◽  
T. Bigault ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Interfacial Roughness ◽  
In Situ Study

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Influence of Surfactant Concentration on Laser-Based Gold Nanoparticle Formation and Stability

2012 ◽  
Vol 65 (2) ◽  
pp. 97 ◽  
Author(s):  
Yuen-Yan Fong ◽  
Jason R. Gascooke ◽  
Gregory F. Metha ◽  
Mark A. Buntine
Keyword(s):  
Critical Micelle Concentration ◽  
Laser Irradiation ◽  
Gold Nanoparticle ◽  
Sodium Dodecylsulfate ◽  
Formation Kinetics ◽  
Transmission Electron ◽  
Bulk Gold ◽  
Microscopy Images ◽  
Apparent Influence

The time evolution of gold nanoparticle (AuNP) yields by in-situ laser irradiation from bulk gold in aqueous solutions containing the surfactant sodium dodecylsulfate (SDS) at concentrations above and below the critical micelle concentration in water is reported. These studies are augmented by transmission electron microscopy images of AuNP samples at each SDS concentration recorded after 90 min of laser irradiation. The results show that while a low concentration of SDS plays a role in the formation kinetics, there is no apparent influence of the SDS concentration around the surfactant critical micelle concentration on particle size during AuNP production.

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