Real-time, in situ spectroscopic ellipsometry for analysis of the kinetics of ultrathin oxide-film growth on MgAl alloys

2006 ◽  
Vol 100 (4) ◽  
pp. 044903 ◽  
Author(s):  
M. S. Vinodh ◽  
L. P. H. Jeurgens ◽  
E. J. Mittemeijer
Keyword(s):  
Oxide Film ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Ultrathin Oxide ◽  
Kinetics Of

Mapping the Phase-Change Parameter Space of Hot-Wire CVD Si:H Films Using In-Situ Real Time Spectroscopic Ellipsometry

2002 ◽  
Vol 715 ◽  
Author(s):  
Dean H. Levi ◽  
Brent P. Nelson ◽  
John D. Perkins
Keyword(s):  
Surface Roughness ◽  
Real Time ◽  
Parameter Space ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Growth Parameter ◽  
Ex Situ ◽  
Degree Of Crystallinity ◽  
Hot Wire

AbstractIn-situ real-time spectroscopic ellipsometry (RTSE) provides detailed information on the evolution of the structural and optical properties of Si:H films during film growth. We have used in-situ RTSE to characterize the film morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH4], substrate temperature Ts, and film thickness db. Transitions from one mode of film growth to another are indicated by abrupt changes in the magnitude of the surface roughness during film growth. The degree of crystallinity of the film can be determined from the bulk dielectric function. We have studied the growth parameter space consisting of R from 0 to 12, Ts from 150°C to 550°C, and db from 0 to 1 um. For each set of R and Ts values, the structural evolution of the film can be characterized by the shape of the surface roughness thickness ds versus bulk thickness db curve. In contrast to studies done by Collins et al on PECVD growth of Si:H films, our studies of HWCVD growth find no conditions where ds remains constant after coalescence of the initial nucleation centers. Most of the films grown within the range of parameters studied exhibit a secondary nucleation and coalescence signature. The transition between a-Si:H and uc-Si:H growth is near the R=3 to R=4 dividing line. Initial coalescence of purely uc-Si:H material doesn't occur until R>8. We have verified the RTsE crystallinity classification using ex-situ Raman scattering.

Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real-Time Characterization of Complex Oxide Film Growth

1999 ◽  
Vol 569 ◽  
Author(s):  
A.H. Mueller ◽  
Y. Gao ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Ion Beam ◽  
Complex Oxide ◽  
Complex Materials ◽  
Ion Scattering ◽  
Beam Surface

ABSTRACTIn-situ real time characterization of chemically and structurally complex thin films is becoming important as complex materials are finding more applications in electronic devices. To this end, a unique thin film growth and deposition system was constructed combining a multi-target sputter deposition system with spectroscopic ellipsometry and time-of-flight ion scattering and recoil spectroscopy. This system is demonstrated with studies on YBa2Cu3O7−δand BaSrTiO3 films.

Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

2016 ◽  
Vol 18 (42) ◽  
pp. 29435-29446 ◽  
Author(s):  
Zhuoran Wang ◽  
Samir Elouatik ◽  
George P. Demopoulos
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Formation Kinetics ◽  
Nano Crystalline ◽  
Multi Wavelength ◽  
Real Time Information ◽  
Kinetics Of ◽  
Time Information ◽  
Annealing Method

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

In-Situ Studies of Epitaxial Thin-Film Growth

1964 ◽  
Vol 19 (7-8) ◽  
pp. 835-843 ◽  
Author(s):  
H. Poppa
Keyword(s):  
Film Growth ◽  
High Resolution Electron Microscopy ◽  
Thin Film Growth ◽  
Continuous Observation ◽  
Epitaxial Thin Film ◽  
Epitaxial Thin Film Growth ◽  
Resolution Electron ◽  
Substrate Surfaces ◽  
Kinetics Of

Early stages of oriented overgrowth of Ag, Au, and Pd on thin, single-crystal substrates of mica, molybdenite, Au and Pd were studied by high-resolution electron microscopy and diffraction. Cleaning of substrate surfaces and deposition of evaporated materials were conducted inside an electron microscope. High-magnification, continuous observation during growth permitted investigation of the kinetics of growth. A number of probably elementary epitaxial processes were studied in detail. Nucleation and growth behavior was examined for different supersaturations and free surface energies of substrate and overgrowth materials. The influence of alloying on growth and the spacing of parallel moiré structures was investigated.

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