Effects of Au film on the kinetics of platinum silicide formation

1987 ◽  
Vol 5 (4) ◽  
pp. 1717-1720 ◽  
Author(s):  
Jerng‐Sik Song ◽  
Chin‐An Chang
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide ◽  
Au Film ◽  
Kinetics Of

On the kinetics of platinum silicide formation

2011 ◽  
Vol 98 (8) ◽  
pp. 082102 ◽  
Author(s):  
Erik J. Faber ◽  
Rob A. M. Wolters ◽  
Jurriaan Schmitz
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Kinetics of platinum silicide formation during rapid thermal processing

1992 ◽  
Vol 72 (5) ◽  
pp. 1833-1836 ◽  
Author(s):  
A. K. Pant ◽  
S. P. Murarka ◽  
C. Shepard ◽  
W. Lanford
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Platinum silicide formation on Si1−yCy epitaxial layers

2013 ◽  
Vol 574 ◽  
pp. 415-420 ◽  
Author(s):  
Kan-Rong Lee ◽  
I-Ping Lin ◽  
Hung-Tai Chang ◽  
Sheng-Wei Lee
Keyword(s):  
Epitaxial Layers ◽  
Silicide Formation ◽  
Platinum Silicide

scholarly journals Kinetics of silicide formation by thin films of V on Si and SiO2 substrates

1974 ◽  
Vol 45 (8) ◽  
pp. 3304-3308 ◽  
Author(s):  
H. Kräutle ◽  
M‐A. Nicolet ◽  
J. W. Mayer
Keyword(s):  
Thin Films ◽  
Silicide Formation ◽  
Kinetics Of

Kinetics of silicide formation in chromium‐amorphous silicon multilayered films

1991 ◽  
Vol 59 (4) ◽  
pp. 449-451 ◽  
Author(s):  
T. E. Schlesinger ◽  
R. C. Cammarata ◽  
S. M. Prokes
Keyword(s):  
Amorphous Silicon ◽  
Silicide Formation ◽  
Multilayered Films ◽  
Kinetics Of

Kinetics of silicide formation measured by in situ ramped resistance measurements

1996 ◽  
Vol 79 (8) ◽  
pp. 4087 ◽  
Author(s):  
E. G. Colgan ◽  
F. M. d’Heurle
Keyword(s):  
Silicide Formation ◽  
Kinetics Of
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