Effect of hydrogen dilution on the remote plasma enhanced chemical vapor deposition of chlorinated SiO2 films

1998 ◽  
Vol 16 (6) ◽  
pp. 3211-3217 ◽  
Author(s):  
J. C. Alonso ◽  
R. Vazquez ◽  
A. Ortiz ◽  
V. Pankov ◽  
E. Andrade
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Sio2 Films ◽  
Hydrogen Dilution

Mechanical Stress in SiO2 Films Obtained by Remote Plasma‐Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 140 (2) ◽  
pp. 564-567 ◽  
Author(s):  
D. Temple ◽  
A. Reisman ◽  
G. G. Fountain ◽  
M. Walters ◽  
S. V. Hattangady
Keyword(s):  
Chemical Vapor Deposition ◽  
Mechanical Stress ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Sio2 Films

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

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