Epitaxial growth of GaP by remote plasma‐enhanced chemical vapor deposition

1993 ◽  
Vol 11 (3) ◽  
pp. 626-630 ◽  
Author(s):  
S. W. Choi ◽  
K. J. Bachmann ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5465-5469 ◽  
Author(s):  
Wei-Chi Lai ◽  
Chun-Yen Chang ◽  
Meiso Yokoyama ◽  
Jen-Dar Guo ◽  
Jian-Shihn Tsang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Gan Film ◽  
Metalorganic Chemical

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Selective epitaxial growth of Ge 1−x Sn x on Si by using metal-organic chemical vapor deposition

2017 ◽  
Vol 468 ◽  
pp. 614-619 ◽  
Author(s):  
Tomoya Washizu ◽  
Shinichi Ike ◽  
Yuki Inuzuka ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
Sign in / Sign up

Export Citation Format

Share Document