Fluorinated–chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4

2001 ◽  
Vol 19 (2) ◽  
pp. 507-514 ◽  
Author(s):  
J. C. Alonso ◽  
E. Pichardo ◽  
L. Rodrı́guez-Fernandez ◽  
J. C. Cheang-Wong ◽  
A. Ortiz
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Sio2 Films

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Low-temperature Si in-situ cleaning and homoepitaxy by remote plasma-enhanced chemical vapor deposition

1990 ◽  
Author(s):  
Ting-Chen Hsu ◽  
Brian G. Anthony ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

Mechanical Stress in SiO2 Films Obtained by Remote Plasma‐Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 140 (2) ◽  
pp. 564-567 ◽  
Author(s):  
D. Temple ◽  
A. Reisman ◽  
G. G. Fountain ◽  
M. Walters ◽  
S. V. Hattangady
Keyword(s):  
Chemical Vapor Deposition ◽  
Mechanical Stress ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Sio2 Films

Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
S. Thomas ◽  
J. Irby ◽  
D. Kinosky ◽  
R. Qian ◽  
I. Iqbal ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Future Generation ◽  
Doping Profile ◽  
Remote Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
P Type

ABSTRACTLow temperature Si and Si1−xGex epitaxy is one of the major thrusts in the trend towards low temperature Si processing for future generation ULSI circuits and novel Si-based devices. A remote plasma-enhanced chemical vapor deposition (RPCVD) technique has been developed to achieve Si homoepitaxy and Si1−xGex heteroepitaxy at low temperatures (≤450'C). P-type films have been grown by introducing 90 ppm or 5000 ppm B2H6/He into the system during the growth process to achieve in situ electrically active boron doping. A mesa diode structure with minimal thermal budget in the fabrication process has been employed to evaluate the properties of the boron-doped Si and Si1−xGex films grown at 450°C by RPCVD. Leakage current densities are reduced for diodes grown at 14–18 W (40–50 Å/min. growth rates) compared to similar devices grown at 6.6 W (5 Å/min.). N-type films have been grown by the introduction of 50 ppm PH3/He. Secondary ion mass spectroscopy (SIMS) has been employed to analyze the boron and phosphorus incorporation efficiencies and doping profiles under different conditions. Boron and phosphorus doping profile transitions as sharp as 50–100 Å/decade have been achieved. Transmission electron microscopy (TEM) has been used to investigate the microstructure of the B-doped films.

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