Insituinvestigation of the growth of rf glow‐discharge deposited amorphous germanium and silicon films

1987 ◽  
Vol 61 (7) ◽  
pp. 2501-2508 ◽  
Author(s):  
A. M. Antoine ◽  
B. Drevillon ◽  
P. Roca i Cabarrocas
1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka

1995 ◽  
Vol 34 (Part 1, No. 10) ◽  
pp. 5743-5750 ◽  
Author(s):  
S. Chattopadhyay ◽  
Debabrata Das ◽  
S. N. Sharma ◽  
A K. Barua ◽  
Ratnabali Banerjee ◽  
...  

1986 ◽  
Vol 70 ◽  
Author(s):  
R. I. Patel ◽  
D. J. Olsen ◽  
J. R. Shirck ◽  
N. T. Tran

ABSTRACTHydrogenated amorphous silicon films were produced from silane/hydrogen and silane/helium gas mixtures by RF glow discharge. We examined the optical and electrical properties of films produced with these gas mixtures, at various RF power levels and silane fractions. Film quality was analyzed by measuring the dark and photoconductivity, optical band gap, and activation energy. Optical emission spectroscopy was also used as a diagnostic tool for studying the plasma during glow discharge depositions. Experimental results indicate that amorphous silicon films made from silane/helium mixtures exhibit improved optoelectronic properties, higher deposition rates, and higher emission intensity ratios (ISiH/IH) as compared to films produced from silane/hydrogen mixtures. In preparing films from silane/helium mixtures, the onset of dust/powder formation occurs at considerably higher RF powers as compared to silane/hydrogen, thus making this approach an attractive commercial option for depositing films at high rates.


Author(s):  
B. Schröder ◽  
J. Geiger ◽  
H.W. Müller

In a previous paper /l/ it has been pointed out that electron energy loss spectroscopy in the infrared spectral region is a very sensitive tool for the study of structure and composition of thin films. Here as a further example the energy loss study of amorphous silicon films is presented. In the case of amorphous semiconductors where most of the optical and electrical properties are still strongly influenced by impurities an analytical test is substantial.Silicon films have been investigated which have been prepared by different methods and under different conditions: by evaporation, by decomposition of silane (SiH4) in a rf glow discharge and by sputtering. The influence of the substrate temperature has been studied for films produced by silane decomposition.Fig. 1 shows a typical spectrum of amorphous silicon prepared by the glow discharge method obtained by 30 keV electrons with a resolution of 3 to 4 meV.


1980 ◽  
Vol 13 (6) ◽  
pp. L101-L105 ◽  
Author(s):  
D Mangalaraj ◽  
M Radhakrishnan ◽  
C Balasubramanian ◽  
A R Kasilingam

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