Analysis of interface roughness’s effect on metal–oxide–semiconductor Fowler-Nordheim tunneling behavior using atomic force microscope images

Heng-Chih Lin; Ji-Feng Ying; Toshiyaki Yamanaka; Simon J. Fang; C. R. Helms

doi:10.1116/1.580709

Analysis of interface roughness’s effect on metal–oxide–semiconductor Fowler-Nordheim tunneling behavior using atomic force microscope images

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580709 ◽

1997 ◽

Vol 15 (3) ◽

pp. 790-796 ◽

Cited By ~ 19

Author(s):

Heng-Chih Lin ◽

Ji-Feng Ying ◽

Toshiyaki Yamanaka ◽

Simon J. Fang ◽

C. R. Helms

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force ◽

Microscope Images ◽

Tunneling Behavior ◽

Nordheim Tunneling

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Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope

Applied Physics Letters ◽

10.1063/1.114105 ◽

1995 ◽

Vol 66 (6) ◽

pp. 703-705 ◽

Cited By ~ 155

Author(s):

S. C. Minne ◽

H. T. Soh ◽

Ph. Flueckiger ◽

C. F. Quate

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force

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The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

Journal of Applied Physics ◽

10.1063/1.4714558 ◽

2012 ◽

Vol 111 (9) ◽

pp. 094511 ◽

Cited By ~ 10

Author(s):

M.-H. Liao ◽

C.-H. Chen ◽

L.-C. Chang ◽

C. Yang ◽

S.-C. Kao

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Atomic Force Microscope ◽

Compressive Stress ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force

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Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3021049 ◽

2009 ◽

Vol 27 (1) ◽

pp. 360 ◽

Cited By ~ 8

Author(s):

L. Aguilera ◽

M. Lanza ◽

A. Bayerl ◽

M. Porti ◽

M. Nafria ◽

...

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Converter ◽

Atomic Force

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Fabrication and transport measurements of atomic force microscope modified silicon metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587839 ◽

1995 ◽

Vol 13 (3) ◽

pp. 1285 ◽

Cited By ~ 4

Author(s):

T. Fayfield

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force ◽

Transport Measurements

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4898009 ◽

2014 ◽

Vol 105 (14) ◽

pp. 142108 ◽

Cited By ~ 35

Author(s):

Patrick Fiorenza ◽

Alessia Frazzetto ◽

Alfio Guarnera ◽

Mario Saggio ◽

Fabrizio Roccaforte

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nordheim Tunneling

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Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability

Journal of Applied Physics ◽

10.1063/1.357438 ◽

1994 ◽

Vol 76 (6) ◽

pp. 3695-3700 ◽

Cited By ~ 100

Author(s):

Klaus F. Schuegraf ◽

Chenming Hu

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Substrate Current ◽

Effect Transistor ◽

Nordheim Tunneling

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Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(97)00184-1 ◽

1997 ◽

Vol 216 ◽

pp. 174-179 ◽

Cited By ~ 1

Author(s):

G. Yard ◽

A. Meinertzhagen ◽

C. Petit ◽

M. Jourdain ◽

F. Mondon

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Injection ◽

Nordheim Tunneling

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Integrated atomic force microscopy array probe with metal–oxide–semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal–oxide–semiconductor electronics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1327299 ◽

2000 ◽

Vol 18 (6) ◽

pp. 2669 ◽

Cited By ~ 41

Author(s):

T. Akiyama ◽

U. Staufer ◽

N. F. de Rooij ◽

D. Lange ◽

C. Hagleitner ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Microscopy ◽

Atomic Force ◽

Array Probe ◽

Semiconductor Electronics ◽

Effect Transistor ◽

On Chip

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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Solid State Communications ◽

10.1016/s0038-1098(01)00221-6 ◽

2001 ◽

Vol 119 (2) ◽

pp. 67-71 ◽

Cited By ~ 1

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Oscillations ◽

Semiconductor Structures ◽

Nordheim Tunneling

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