scholarly journals The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

2012 ◽  
Vol 111 (9) ◽  
pp. 094511 ◽  
Author(s):  
M.-H. Liao ◽  
C.-H. Chen ◽  
L.-C. Chang ◽  
C. Yang ◽  
S.-C. Kao
Keyword(s):  
Ion Implantation ◽  
Metal Oxide ◽  
Atomic Force Microscope ◽  
Compressive Stress ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Atomic Force

Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 541-545 ◽  
Author(s):  
Takashi Kuroi ◽  
Youji Kawasaki ◽  
Yoshiyuki Ishigaki ◽  
Yasushi Kinoshita ◽  
Masahide Inuishi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
High Energy ◽  
Metal Oxide Semiconductor ◽  
Bipolar Transistor ◽  
Oxide Semiconductor ◽  
Buried Layer
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