Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

L. Aguilera; M. Lanza; A. Bayerl; M. Porti; M. Nafria; X. Aymerich

doi:10.1116/1.3021049

Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3021049 ◽

2009 ◽

Vol 27 (1) ◽

pp. 360 ◽

Cited By ~ 8

Author(s):

L. Aguilera ◽

M. Lanza ◽

A. Bayerl ◽

M. Porti ◽

M. Nafria ◽

...

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Converter ◽

Atomic Force

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Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope

Applied Physics Letters ◽

10.1063/1.114105 ◽

1995 ◽

Vol 66 (6) ◽

pp. 703-705 ◽

Cited By ~ 155

Author(s):

S. C. Minne ◽

H. T. Soh ◽

Ph. Flueckiger ◽

C. F. Quate

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force

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The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

Journal of Applied Physics ◽

10.1063/1.4714558 ◽

2012 ◽

Vol 111 (9) ◽

pp. 094511 ◽

Cited By ~ 10

Author(s):

M.-H. Liao ◽

C.-H. Chen ◽

L.-C. Chang ◽

C. Yang ◽

S.-C. Kao

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Atomic Force Microscope ◽

Compressive Stress ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force

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Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2958246 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1445 ◽

Cited By ~ 8

Author(s):

L. Aguilera ◽

W. Polspoel ◽

A. Volodin ◽

C. Van Haesendonck ◽

M. Porti ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force

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Fabrication and transport measurements of atomic force microscope modified silicon metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587839 ◽

1995 ◽

Vol 13 (3) ◽

pp. 1285 ◽

Cited By ~ 4

Author(s):

T. Fayfield

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force ◽

Transport Measurements

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Analysis of interface roughness’s effect on metal–oxide–semiconductor Fowler-Nordheim tunneling behavior using atomic force microscope images

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580709 ◽

1997 ◽

Vol 15 (3) ◽

pp. 790-796 ◽

Cited By ~ 19

Author(s):

Heng-Chih Lin ◽

Ji-Feng Ying ◽

Toshiyaki Yamanaka ◽

Simon J. Fang ◽

C. R. Helms

Keyword(s):

Metal Oxide ◽

Atomic Force Microscope ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force ◽

Microscope Images ◽

Tunneling Behavior ◽

Nordheim Tunneling

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3457388 ◽

2010 ◽

Vol 96 (25) ◽

pp. 253502 ◽

Cited By ~ 19

Author(s):

Yen-Ting Chen ◽

Han Zhao ◽

Yanzhen Wang ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528615 ◽

2016 ◽

Author(s):

Yu-Shyan Lin ◽

Chi-Che Lu

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Cited By ~ 109

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

Thin Solid Films ◽

10.1016/s0040-6090(96)09332-7 ◽

1997 ◽

Vol 296 (1-2) ◽

pp. 37-40 ◽

Cited By ~ 1

Author(s):

V. Ramgopal Rao ◽

W. Hansch ◽

H. Baumgärtner ◽

I. Eisele ◽

D.K. Sharma ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Thin Metal ◽

Oxide Semiconductor

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