Electrical characterization of Uromyces germ tubes grown on integrated circuit substrates

1997 ◽  
Vol 15 (3) ◽  
pp. 779-783
Author(s):  
Helen A. McNally ◽  
Michael N. Kozicki ◽  
Robert W. Roberson ◽  
Thomas K. Whidden
Keyword(s):  
Integrated Circuit ◽  
Electrical Characterization ◽  
Germ Tubes

Electrical characterization of integrated circuit molding compound

1999 ◽  
Vol 22 (3) ◽  
pp. 337-342 ◽  
Author(s):  
C.C. Green ◽  
J.M. Seligman ◽  
J.L. Prince ◽  
K.L. Virga
Keyword(s):  
Integrated Circuit ◽  
Electrical Characterization ◽  
Molding Compound

Electrical Characterization of 65 W Cubic Sonoreactor with Horizontally Stacked Transducers

2017 ◽  
Vol 42 (1) ◽  
pp. 149-153
Author(s):  
Pansak Kerdthongmee ◽  
Chat Pholnak ◽  
Chitnarong Sirisathitkul ◽  
Sorasak Danworaphong
Keyword(s):  
Lead Zirconate Titanate ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Electrical Characterization ◽  
Acoustic Cavitation ◽  
Lead Zirconate ◽  
Maximum Temperature ◽  
Sonochemical Synthesis ◽  
Circuit Power

Abstract A sonoreactor was assembled with stacked lead zirconate titanate transducers. These transducers were attached on one side of a 10×10×10 cm3 chamber and driven by an integrated circuit power amplifier. The impedance of the reactor was analyzed in order to determine a matching inductance. The electrical frequency could be varied from 20 to 50 kHz and the electrical output power was adjustable up to 65 W. The highest power was obtained in the case of resonance at 31 kHz and the maximum temperature at the heat sink of the amplifier rose to 42.0° C. Both acoustic cavitation and mechanical effects could be utilized in this sonoreactor for a variety of purposes including sonochemical synthesis, ultrasonic cleaning and microbial cell disruption.

Mechanical and Electrical Characterization of an IC Bond Pad Stack Using a Novel In-Situ Methodology

2003 ◽  
Author(s):  
C.D. Hartfield ◽  
J.J. Broz ◽  
T.M. Moore
Keyword(s):  
Integrated Circuit ◽  
Electrical Characterization ◽  
Dynamic Contact ◽  
Wafer Level ◽  
New Class ◽  
Increased Risk ◽  
Bond Pads ◽  
Low K

Abstract The semiconductor industry’s efforts to integrate dielectrics into Si devices has driven characterization efforts to address the challenges presented by adoption of this new class of materials. Abundant literature exists on the considerations required for CMP process recommendations for successful fabrication, adhesion requirements for both fabrication and assembly, and considerations for interconnect structure to enable wire-bonding. There is also interest in understanding the wafer level test challenges presented by the low-K devices. In addition to the typical concerns about reaching the best compromise of good contact resistance (CRES) performance with a minimum amount of probe damage, low-K materials present an increased risk of compromising the dielectric or barrier layers beneath bond pads. For a better understanding of the dynamic contact phenomenon of probing and its effect on the integrated circuit (IC) metal stack, a specialized in-situ nanomanipulator tool was developed for simultaneous visualization of probing events with data recording of electrical and load measurements. This paper describes initial research with this new tool.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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