Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma

1996 ◽  
Vol 14 (4) ◽  
pp. 2062-2070 ◽  
Author(s):  
Sang M. Han ◽  
Eray S. Aydil
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Ar Plasma

Combining Molecular Dynamics and Monte Carlo Simulations to Model Chemical Vapor Deposition: Application to Diamond

1992 ◽  
Vol 278 ◽  
Author(s):  
D.W. Brenner ◽  
D.H. Robertson ◽  
R.J. Carty ◽  
D. Srivastava ◽  
B.J. Garrison
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Md Simulations ◽  
Monte Carlo Algorithm ◽  
Surface Collision ◽  
Classical Trajectories

AbstractGas-surface reactions of the type that contribute to growth during the chemical vapor deposition (CVD) of diamond films are generally completed in picoseconds, well within timescales accessible by molecular dynamics (MD) simulations. For low-pressure deposition, however, the time between collisions for a surface site can be microseconds, which makes direct modeling of CVD crystal growth impossible using standard MD methods. To effectively bridge this discrepancy in timescales, the gas-surface reactions can be modeled using MD trajectories, and then this data can be used to define probabilities in a Monte Carlo algorithm where each step represents a gas-surface collision. We illustrate this approach using the reaction of atomic hydrogen with a diamond (111) surface as an example, where we use abstraction and sticking probabilities generated using classical trajectories in a simple Monte Carlo algorithm to determine the number of open sites as a function of temperature. We also include models for the thermal desorption of hydrogen that predict that growth temperatures are not restricted by the thermal loss of chemisorbed hydrogen.

scholarly journals Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

2017 ◽  
Vol 122 (1) ◽  
pp. 648-661 ◽  
Author(s):  
Pitsiri Sukkaew ◽  
Emil Kalered ◽  
Erik Janzén ◽  
Olof Kordina ◽  
Örjan Danielsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor

Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba, Sr)TiO3Films Prepared by a Liquid Source Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3435-3441 ◽  
Author(s):  
Mikio Yamamuka ◽  
Takaaki Kawahara ◽  
Masayoshi Tarutani ◽  
Tsuyoshi Horikawa ◽  
Teruo Shibano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Liquid Source
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