scholarly journals Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

2017 ◽  
Vol 122 (1) ◽  
pp. 648-661 ◽  
Author(s):  
Pitsiri Sukkaew ◽  
Emil Kalered ◽  
Erik Janzén ◽  
Olof Kordina ◽  
Örjan Danielsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor

Growth Mechanism of YBa2Cu4O8(124) Phase in Metalorganic Chemical Vapor Deposition Film

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L725-L727 ◽  
Author(s):  
Harumi Hayashi ◽  
Yasuji Yamada ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Preparation and growth mechanism of one-dimensional NdB6 nanostructures: nanobelts, nanoawls, and nanotubes

RSC Advances ◽  
2016 ◽  
Vol 6 (48) ◽  
pp. 41891-41896 ◽  
Author(s):  
Wei Han ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Qidong Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
One Dimensional

1D NdB6 nanostructures (nanobelts, nanoawls, and nanotubes) have been synthesized through a chemical vapor deposition (CVD) process with a self-catalyzed mechanism.

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

scholarly journals Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1062
Author(s):  
Yi Chu ◽  
Yugui Cui ◽  
Shaoyun Huang ◽  
Yingjie Xing ◽  
Hongqi Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Element Analysis ◽  
Kondo Insulator ◽  
Catalyst Free ◽  
Transmission Electron ◽  
The Difference ◽  
Physical Phenomena

SmB6 nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB6 nanowires and Ni is the most popular catalyst used to initiate the growth of SmB6 nanowires. Here, we study the effect of growth mechanism on the surface of SmB6 nanowires synthesized by CVD. Two types of SmB6 nanowires are obtained when using Ni as the catalyst. In addition to pure SmB6 nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB6 nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB6 nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.

scholarly journals Growth Mechanism of Continuous Monolayer MoS2 Prepared by Chemical Vapor Deposition

2019 ◽  
Vol 562 ◽  
pp. 012074
Author(s):  
Wenzhao Wang ◽  
Xiangbin Zeng ◽  
Zhenyu Guo ◽  
Jia Ding ◽  
Xiaoxiao Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Monolayer Mos2

Combining Molecular Dynamics and Monte Carlo Simulations to Model Chemical Vapor Deposition: Application to Diamond

1992 ◽  
Vol 278 ◽  
Author(s):  
D.W. Brenner ◽  
D.H. Robertson ◽  
R.J. Carty ◽  
D. Srivastava ◽  
B.J. Garrison
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Md Simulations ◽  
Monte Carlo Algorithm ◽  
Surface Collision ◽  
Classical Trajectories

AbstractGas-surface reactions of the type that contribute to growth during the chemical vapor deposition (CVD) of diamond films are generally completed in picoseconds, well within timescales accessible by molecular dynamics (MD) simulations. For low-pressure deposition, however, the time between collisions for a surface site can be microseconds, which makes direct modeling of CVD crystal growth impossible using standard MD methods. To effectively bridge this discrepancy in timescales, the gas-surface reactions can be modeled using MD trajectories, and then this data can be used to define probabilities in a Monte Carlo algorithm where each step represents a gas-surface collision. We illustrate this approach using the reaction of atomic hydrogen with a diamond (111) surface as an example, where we use abstraction and sticking probabilities generated using classical trajectories in a simple Monte Carlo algorithm to determine the number of open sites as a function of temperature. We also include models for the thermal desorption of hydrogen that predict that growth temperatures are not restricted by the thermal loss of chemisorbed hydrogen.

Sign in / Sign up

Export Citation Format

Share Document