Effects of TaN Substrate Pretreatment by Ar Plasma on Copper Chemical Vapor Deposition

2002 ◽  
Vol 149 (5) ◽  
pp. C237 ◽  
Author(s):  
Cheng-Li Lin ◽  
Peng-Sen Chen ◽  
Mao-Chieh Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Substrate Pretreatment ◽  
Ar Plasma

Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition

2000 ◽  
Vol 39 (Part 1, No. 5A) ◽  
pp. 2761-2766 ◽  
Author(s):  
Jun-ichi Hashimoto ◽  
Nobuyuki Ikoma ◽  
Michio Murata ◽  
Jiro Fukui ◽  
Toshio Nomaguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Treatment ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma Irradiation ◽  
Ar Plasma

Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream

1986 ◽  
Vol 25 (Part 1, No. 12) ◽  
pp. 1805-1810 ◽  
Author(s):  
Takeshi Watanabe ◽  
Kazufumi Azuma ◽  
Mitsuo Nakatani ◽  
Kazuo Suzuki ◽  
Tadashi Sonobe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Stream ◽  
Ar Plasma

scholarly journals Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 18757-18761 ◽  
Author(s):  
Yanping Sui ◽  
Zhiying Chen ◽  
Yanhui Zhang ◽  
Shike Hu ◽  
Yijian Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Plasma Treatment ◽  
Vapor Deposition ◽  
Growth Promotion ◽  
Chemical Vapor ◽  
Plasma Process ◽  
Ar Plasma

This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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