Elementary surface reactions in the preparation of vanadium oxide overlayers on silica by chemical vapor deposition

1991 ◽  
Vol 95 (12) ◽  
pp. 4826-4832 ◽  
Author(s):  
Kei Inumaru ◽  
Toshio Okuhara ◽  
Makoto Misono
Keyword(s):  
Chemical Vapor Deposition ◽  
Vanadium Oxide ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Elementary Surface

Combining Molecular Dynamics and Monte Carlo Simulations to Model Chemical Vapor Deposition: Application to Diamond

1992 ◽  
Vol 278 ◽  
Author(s):  
D.W. Brenner ◽  
D.H. Robertson ◽  
R.J. Carty ◽  
D. Srivastava ◽  
B.J. Garrison
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Md Simulations ◽  
Monte Carlo Algorithm ◽  
Surface Collision ◽  
Classical Trajectories

AbstractGas-surface reactions of the type that contribute to growth during the chemical vapor deposition (CVD) of diamond films are generally completed in picoseconds, well within timescales accessible by molecular dynamics (MD) simulations. For low-pressure deposition, however, the time between collisions for a surface site can be microseconds, which makes direct modeling of CVD crystal growth impossible using standard MD methods. To effectively bridge this discrepancy in timescales, the gas-surface reactions can be modeled using MD trajectories, and then this data can be used to define probabilities in a Monte Carlo algorithm where each step represents a gas-surface collision. We illustrate this approach using the reaction of atomic hydrogen with a diamond (111) surface as an example, where we use abstraction and sticking probabilities generated using classical trajectories in a simple Monte Carlo algorithm to determine the number of open sites as a function of temperature. We also include models for the thermal desorption of hydrogen that predict that growth temperatures are not restricted by the thermal loss of chemisorbed hydrogen.

scholarly journals Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

2017 ◽  
Vol 122 (1) ◽  
pp. 648-661 ◽  
Author(s):  
Pitsiri Sukkaew ◽  
Emil Kalered ◽  
Erik Janzén ◽  
Olof Kordina ◽  
Örjan Danielsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor

Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba, Sr)TiO3Films Prepared by a Liquid Source Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3435-3441 ◽  
Author(s):  
Mikio Yamamuka ◽  
Takaaki Kawahara ◽  
Masayoshi Tarutani ◽  
Tsuyoshi Horikawa ◽  
Teruo Shibano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Liquid Source

Chemical Vapor Deposition of Vanadium Oxide Tiiin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Ogie Stewart ◽  
Joan Rodriguez ◽  
Keith B. Williams ◽  
Gene P. Reck ◽  
Narayan Malani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vanadium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Vanadium Oxide Thin Films ◽  
Deposited Films

AbstractVanadium oxide thin films were grown on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) from the reaction of vanadium(IV) chloride with isopropanol and t-butanol. Films were deposited in the temperature range 250 to 450°C. The as-deposited films were a dark greenish color consistent with formation of a lower oxide of vanadium. Annealing a film deposited on Corning 7059 glass in air converted the material to a yellow film. X-ray diffraction of the yellow film revealed the presence of V2O5. Optical spectra of the films are presented. Glass substrates previously coated with conductive fluorine doped tin oxide were coated with V2O5 and evaluated for electrochromic activity.

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