Correlation of x‐ray photoelectron spectroscopy and Rutherford backscattering spectroscopy depth profiles on Hg1−xCdxTe native oxides

1994 ◽  
Vol 12 (1) ◽  
pp. 35-43 ◽  
Author(s):  
G. H. Winton ◽  
L. Faraone ◽  
R. Lamb
Keyword(s):  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
X Ray ◽  
Depth Profiles ◽  
Native Oxides

Photo-Chemical Changes of Aluminium Films on Silicon

1988 ◽  
Vol 119 ◽  
Author(s):  
A. J. Kellock ◽  
J. S. Williams ◽  
G. L. Nyberg ◽  
J. Liesegang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Surface Oxidation ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Chemical Changes ◽  
X Ray ◽  
Surface And Interface ◽  
Photon Irradiation

AbstractX-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

Characterization of thin Chemical/Native Oxides on Si (100) by Auger and Angle-Resolved XPS

1993 ◽  
Vol 318 ◽  
Author(s):  
Eddie D. Pylant ◽  
Carolyn F. Hoener ◽  
Mark F. Arendt ◽  
Bob Witowski
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Depth Distribution ◽  
Oxidation States ◽  
State Distribution ◽  
X Ray ◽  
Depth Profiles ◽  
Native Oxides ◽  
Target Factor Analysis

ABSTRACTChemical/native oxides grown on Si(100) after several standard wet cleans are characterized by Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS), and Auger Electron Spectroscopy using sputter depth profiles. Target Factor Analysis (TFA) was used to separate the Si LVV Auger peak into three components identified by their lineshapes and positions as Si, SiO2, and SiOx- Auger depth profiles were used to quantify the thickness of the oxides, the depth distribution, and amount of SiOx in the interface region. ARXPS was used to study the chemical state distribution in the native oxides as a function of depth. The depth distribution function from the Auger data was converted to an angle-resolved format for direct comparison to the angle-resolved XPS data. With this comparison, the SiOx lineshape is correlated to a 3:1 mixture of Si 3+ and Si 2+ oxidation states.

Surface Stoichiometry of CdSe Nanocrystals

1998 ◽  
Vol 536 ◽  
Author(s):  
Jason Taylor ◽  
Tadd Kippeny ◽  
Jonathan C. Bennett ◽  
Mengbing Huang ◽  
Leonard C. Feldman ◽  
...  
Keyword(s):  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Size Dependence ◽  
Intrinsic Property ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Trioctylphosphine Oxide ◽  
Cdse Nanocrystals ◽  
X Ray

AbstractRutherford backscattering spectroscopy (RBS) has been applied to determine the constitution of prototypical CdSe nanocrystals synthesized by the high temperature pyrolysis of organometallics in trioctylphosphine oxide (TOPO). The diameter of the nanocrystals was varied from 22 Å to 58 Å. For all nanocrystal sizes the nanocrystals are Cd rich with an average Cd:Se ratio of 1.2 ± 0.1. The Cd:Se stoichiometery is independent of the starting Cd:Se ratio used for nanocrystal preparation, indicating the excess Cd is not associated with the initial abundance but is an intrinsic property of nanocrystals prepared by this method. The size dependence of excess Cd indicates the extra Cd is on the surface of the crystallite. The coverage of the surface passivating TOPO ligands has also been determined and is larger than reported in previous X-ray photoelectron spectroscopy (XPS) studies of Bowen Katari et al. The origin and structural implications of non-stoichoimetric Cd are discussed.

Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)

2016 ◽  
Vol 858 ◽  
pp. 449-452
Author(s):  
Yuji Kiuchi ◽  
Hidenori Kitai ◽  
Hiromu Shiomi ◽  
Masatoshi Tsujimura ◽  
Daisuke Nakata ◽  
...  
Keyword(s):  
High Resolution ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Vacancy Defects ◽  
Channel Mobility ◽  
X Ray ◽  
Cathode Luminescence ◽  
Oxide Defects

Wet and N2O oxidized SiO2/SiC for C-face substrates were comprehensively investigated to clarify the origin of oxide defects which affect channel mobility and threshold voltage stability by using leakage-current analysis. The estimated defects are identified by cathode luminescence, X-ray photoelectron spectroscopy, and high-resolution Rutherford backscattering spectroscopy. The origin of the observed oxide defects might be complex defect of O vacancy defects and/or C related defects including N.

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Sign in / Sign up

Export Citation Format

Share Document