Tungsten silicide composition analysis by Rutherford backscattering spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy

1998 ◽  
Vol 16 (3) ◽  
pp. 1103-1105 ◽  
Author(s):  
C. A. Bradbury ◽  
D. K. Fillmore
Keyword(s):  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Composition Analysis ◽  
Tungsten Silicide ◽  
X Ray

scholarly journals Silicon-Based Coatings on Niobium Metal

1989 ◽  
Vol 170 ◽  
Author(s):  
P. D. Stupik ◽  
T. R. Jervis ◽  
M. Nastasi ◽  
M. M. Donovan ◽  
A. R. Barron
Keyword(s):  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Silicon Based

AbstractSilicon coatings on niobium substrates were subjected to thermal, ion beam and laser mixing, and the effectiveness of the different methods for the synthesis of graded interfaces was compared. The resulting metal/silicon interfaces were characterized by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Rutherford backscattering (RBS).

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

Sign in / Sign up

Export Citation Format

Share Document