Analysis of iridium–aluminum thin films by x‐ray photoelectron spectroscopy and Rutherford backscattering spectroscopy

1990 ◽  
Vol 8 (3) ◽  
pp. 2251-2254 ◽  
Author(s):  
D. R. Anderson ◽  
J. K. Lampert ◽  
A. Mishra ◽  
H. Z. Wu ◽  
K. Unruh
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
X Ray

Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films

1993 ◽  
Vol 32 (Part 1, No. 1A) ◽  
pp. 164-165 ◽  
Author(s):  
Kunio Nakajima ◽  
Sadao Aoki ◽  
Shuzo Sudo ◽  
Munehiro Mondo ◽  
Hiroshi Kudo ◽  
...  
Keyword(s):  
Thin Films ◽  
Density Measurement ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
X Ray

Photo-Chemical Changes of Aluminium Films on Silicon

1988 ◽  
Vol 119 ◽  
Author(s):  
A. J. Kellock ◽  
J. S. Williams ◽  
G. L. Nyberg ◽  
J. Liesegang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Surface Oxidation ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Chemical Changes ◽  
X Ray ◽  
Surface And Interface ◽  
Photon Irradiation

AbstractX-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

Surface Stoichiometry of CdSe Nanocrystals

1998 ◽  
Vol 536 ◽  
Author(s):  
Jason Taylor ◽  
Tadd Kippeny ◽  
Jonathan C. Bennett ◽  
Mengbing Huang ◽  
Leonard C. Feldman ◽  
...  
Keyword(s):  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Size Dependence ◽  
Intrinsic Property ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Trioctylphosphine Oxide ◽  
Cdse Nanocrystals ◽  
X Ray

AbstractRutherford backscattering spectroscopy (RBS) has been applied to determine the constitution of prototypical CdSe nanocrystals synthesized by the high temperature pyrolysis of organometallics in trioctylphosphine oxide (TOPO). The diameter of the nanocrystals was varied from 22 Å to 58 Å. For all nanocrystal sizes the nanocrystals are Cd rich with an average Cd:Se ratio of 1.2 ± 0.1. The Cd:Se stoichiometery is independent of the starting Cd:Se ratio used for nanocrystal preparation, indicating the excess Cd is not associated with the initial abundance but is an intrinsic property of nanocrystals prepared by this method. The size dependence of excess Cd indicates the extra Cd is on the surface of the crystallite. The coverage of the surface passivating TOPO ligands has also been determined and is larger than reported in previous X-ray photoelectron spectroscopy (XPS) studies of Bowen Katari et al. The origin and structural implications of non-stoichoimetric Cd are discussed.

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