scholarly journals Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Crystals ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 248 ◽  
Author(s):  
Xuguang Luo ◽  
Yao Li ◽  
Hong Yang ◽  
Yuanlan Liang ◽  
Kaiyan He ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

scholarly journals Crystallization dynamics and interface stability of strontium titanate thin films on silicon

2015 ◽  
Vol 48 (2) ◽  
pp. 393-400 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Hanzig ◽  
Erik Mehner ◽  
Carsten Richter ◽  
Jozef Veselý ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Grazing Incidence ◽  
Atmospheric Conditions ◽  
X Ray Diffraction ◽  
Heating Rates ◽  
X Ray ◽  
Crystallization Dynamics

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO3layers is investigated byin situgrazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO3is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

The Dynamics of Cadmium Telluride Etching

2003 ◽  
Vol 763 ◽  
Author(s):  
K. D. Dobson ◽  
P. D. Paulson ◽  
B. E. McCandless ◽  
R. W. Birkmire
Keyword(s):  
Grain Boundary ◽  
Cadmium Telluride ◽  
Spectroscopic Ellipsometry ◽  
Ambient Air ◽  
Surface Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Variable Angle ◽  
Glancing Angle ◽  
Variable Angle Spectroscopic Ellipsometry

AbstractCdTe etching was investigated using variable angle spectroscopic ellipsometry and glancing angle x-ray diffraction. Treatment with HNO3:H3PO4 (NP) based etches was shown to form amorphous-Te surface films which spontaneously crystallize following etching. Br2/methanol (BM) etching forms very thin amorphous-Te films. NP-etched surfaces are stable in ambient air for ∼1 hr before beginning to oxidize, while BM etched films oxidize immediately following treatment. CdTe grain boundary etching by NP was minimized using more acidic etches. Device analysis suggests that a higher Te content produces more stable back contacts by attenuating Cu diffusion. Mechanistic details of NP etching are discussed.

Oxidation of Ni-toughened nc-TiN/a-SiNx nanocomposite thin films

2005 ◽  
Vol 20 (10) ◽  
pp. 2754-2762 ◽  
Author(s):  
Sam Zhang ◽  
Deen Sun ◽  
Xianting Zeng
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Oxidation Mechanism ◽  
Grazing Incidence ◽  
Threshold Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Oxygen Ions ◽  
Atomic Force

Oxidation behavior of Ni-toughened reactively sputtered composite thin films of nanocrystalline TiN and amorphous SiNx [denoted as nc-TiN/a-SiNx(Ni)] was explored to understand the oxidation mechanism. The films were deposited on silicon substrate using a magnetron sputtering technique. Oxidation was carried out from 450 °C up to 1000 °C. The nature of the oxidation was determined using x-ray photoelectron spectroscopy. The microstructure of the oxidized films was studied using grazing incidence x-ray diffraction. The topography was characterized using atomic force microscopy. It was determined that the oxidation of the nc-TiN/a-SiNx(Ni) thin film proceeds primarily through a diffusion process, in which nickel atoms diffuse outward and oxygen ions inward. The oxidation takes place by progressive replacement of nitrogen with diffused oxygen. Five regions were identified in the oxidized layer from surface into the film. For films doped with 2.1 at.% Ni, a threshold temperature of 850 °C was determined, below which, excellent oxidation resistance prevails but above which, oxidation takes place at exponential rate, accompanied by abrupt increase of surface roughness.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Sign in / Sign up

Export Citation Format

Share Document