Low‐energy hydrogen ion bombardment damage in silicon: An in situ optical investigation

1987 ◽  
Vol 5 (5) ◽  
pp. 2797-2803 ◽  
Author(s):  
R. W. Collins ◽  
J. M. Cavese
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Optical Investigation

In situ observation of low energy hydrogen ion irradiation damage in copper

1995 ◽  
Vol 220-222 ◽  
pp. 810-814 ◽  
Author(s):  
M. Fukui ◽  
R. Sakamoto ◽  
K. Araki ◽  
T. Fujiwara ◽  
T. Muroga ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Irradiation Damage ◽  
In Situ Observation

GaAs surface cleaning by low-energy hydrogen ion bombardment at moderate temperatures

2005 ◽  
Vol 97 (2) ◽  
pp. 023511 ◽  
Author(s):  
E. Schubert ◽  
N. Razek ◽  
F. Frost ◽  
A. Schindler ◽  
B. Rauschenbach
Keyword(s):  
Ion Bombardment ◽  
Surface Cleaning ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Gaas Surface

In situ EELS observation of diamond during hydrogen-ion bombardment

1992 ◽  
Vol 191-194 ◽  
pp. 346-350 ◽  
Author(s):  
K.N. Kushita ◽  
K. Hojou ◽  
S. Furuno ◽  
H. Otsu
Keyword(s):  
Ion Bombardment ◽  
Hydrogen Ion

scholarly journals Intra-Cascade Surface Recombination of Point Defects During Ion Bombardment of Ge (001)

1993 ◽  
Vol 316 ◽  
Author(s):  
J. A. Floro ◽  
B. K. Kellerman ◽  
E. Chason ◽  
S. T. Picraux ◽  
D. K. Brice ◽  
...  
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
Yield Reduction ◽  
High Energy Electron ◽  
Near Surface ◽  
Large Numbers

ABSTRACTLow energy Ar and Xe ion bombardment of Ge (001) produces large numbers of point defects on the Ge surface and in the near-surface regions. Defect concentrations on the surface are detected and quantified in real time during bombardment using in situ Reflection High Energy Electron Diffraction (RHEED). We report the energy dependence of the defect yield for 70–500 eV Ar and Xe ion bombardment, and the temperature dependence of the defect yield (defects/ion) during 200 eV ion bombardment. The defect yield drops rapidly as the substrate temperature during bombardment is varied from 175 K to 400 K. We attribute the yield reduction to surface recombination of adatoms and vacancies produced in the same collision cascade.

Sign in / Sign up

Export Citation Format

Share Document