In situ analysis of Si(100) surface damage induced by low-energy rare-gas ion bombardment using x-ray photoelectron spectroscopy

1997 ◽  
Vol 15 (3) ◽  
pp. 820-824 ◽  
Author(s):  
Masahiko Ishii ◽  
Yoshiharu Hirose ◽  
Toshikazu Sato ◽  
Takeshi Ohwaki ◽  
Yasunori Taga
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Bombardment ◽  
Surface Damage ◽  
Low Energy ◽  
In Situ Analysis ◽  
Rare Gas ◽  
X Ray

scholarly journals In situ analysis of lithium-ion secondary battery using low-energy X-ray microscopy

2019 ◽  
Vol 5 (0) ◽  
pp. 18-00452-18-00452 ◽  
Author(s):  
Suguru UEMURA ◽  
Takashi SASABE ◽  
Yuichiro TABUCHI ◽  
Junko KURIHARA ◽  
Ting Chu JAO ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Low Energy ◽  
In Situ Analysis ◽  
X Ray ◽  
Secondary Battery

Comparison Between the Reaction Mechanisms of Nitridation of Si(100) by a NH3 Molecular Beam and by a $\rm{N}^+_2$ Ion Beam

1998 ◽  
Vol 05 (01) ◽  
pp. 81-84 ◽  
Author(s):  
I. Kusunoki ◽  
S. Ishidzuka ◽  
Y. Igari ◽  
T. Takaoka
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Nitride Layer ◽  
Low Energy ◽  
Nitride Film ◽  
Xps Spectra ◽  
X Ray ◽  
Energy Formula ◽  
The Difference

Nitridation of a Si(100) surface takes place with NH3 at temperatures higher than 600°C and with a low energy [Formula: see text] ion beam at room temperature, formating a thin film of nitride. The nitridation processes have been studied in situ under ultrahigh vacuum by X-ray photoelectron spectroscopy (XPS). The reaction with NH3 occurs on the surface with Si atoms supplied by out-diffusion from the substrate, producing a nitride film. On the other hand, the N atoms of the low energy [Formula: see text] ion beam (100–1000 eV) penetrate into the bulk by their kinetic energy and form the nitride layer near the surface. The difference of these mechanisms is clearly observed in the evolution of the N1s and Si2p XPS spectra during the reaction.

Effects of Ion Bombardment on Chemical Interactions at SiC Surface and AI/SiC Interfaces

1996 ◽  
Vol 438 ◽  
Author(s):  
Heather L. Beck ◽  
Moon-H. Lee ◽  
Fumio S. Ohuchi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxygen Affinity ◽  
Ion Bombardment ◽  
Aluminum Carbide ◽  
X Ray ◽  
Preferential Sputtering ◽  
Strong Surface

AbstractAn investigation into the SiC surface and its interaction with aluminum, in particular, focusing on the effect of ion bombardment and adsorption of oxygen, is described. Stoichiometric and carbon rich and SiC surfaces were produced and analyzed “in situ” by Auger electron spectroscopy and x-ray photoelectron spectroscopy. Cubic SiC shows preferential sputtering under Ar ion bombardment, leading to carbon rich surface, whereas high temperature annealing also causes carbon rich surface. Activity of these surfaces was compared with oxygen and aluminum adsorption. Stoichiometrically sputtered surface showed vastly increased oxygen affinity, whereas carbon-rich sputtered surfaces did not. Aluminum deposition caused significant Al-C interaction for the stoichometric ion-bombarded surface. Aluminum carbide was induced catalytically upon heating in the presence of oxygen. Carbon-rich surfaces had, however, no significant interactions with as-deposited Al due to strong surface C-C bonds.

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