In situ spectroscopic ellipsometry studies of hydrogen ion bombardment of crystalline silicon

1992 ◽  
Vol 10 (3) ◽  
pp. 1111 ◽  
Author(s):  
Y. Z. Hu
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Ion Bombardment ◽  
Hydrogen Ion

Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using in-situ Real-Time Spectroscopic Ellipsometry

2004 ◽  
Vol 808 ◽  
Author(s):  
D.H. Levi ◽  
C.W. Teplin ◽  
E. Iwaniczko ◽  
R.K. Ahrenkiel ◽  
H.M. Branz ◽  
...  
Keyword(s):  
Solar Cells ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Analysis Tool

ABSTRACTWe have applied real-time spectroscopic ellipsometry (RTSE) as both an in-situ diagnostic and post-growth analysis tool for hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction with intrinsic thin-layer (HIT) solar cells grown by hot-wire chemical vapor deposition. RTSE enables precise thickness control of the 5 to 25 nm layers used in these devices, as well as monitoring crystallinity and surface roughness in real time. Utilizing RTSE feedback, but without extensive optimization, we have achieved a photovoltaic energy conversion efficiency of 14.1% on an Al-backed p-type Czochralski c-Si wafer coated with thin i and n layers on the front. Open-circuit voltages above 620 mV indicate effective passivation of the c-Si surface by the a-Si:H intrinsic layer. Lifetime measurements using resonant coupled photoconductive decay indicate that surface recombination velocities can approach 1 cm/s. RTSE and transmission electron microscopy show that the intrinsic a-Si:H i-layers grow as a mixture of amorphous and nano-crystalline silicon.

Real-time spectroscopic ellipsometry as an in-situ probe of the growth dynamics of amorphous and epitaxial crystal silicon for photovoltaic applications

2005 ◽  
Vol 862 ◽  
Author(s):  
D.H. Levi ◽  
C.W. Teplin ◽  
E. Iwaniczko ◽  
Y. Yan ◽  
T.H. Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Degree Of Crystallinity ◽  
Analysis Tool ◽  
Crystal Silicon ◽  
Tem Analysis ◽  
Photovoltaic Applications ◽  
Si Wafer

AbstractIn this paper we report on our work using in-situ real time spectroscopic ellipsometry (RTSE) to study the dynamics of hot-wire chemical vapor deposition (HWCVD) of hydrogenated amorphous silicon (a-Si:H) and epitaxial crystal silicon (epi-Si) for photovoltaic applications. We utilize RTSE as both an in-situ diagnostic and a postgrowth analysis tool for a-Si:H/crystalline silicon heterojunction (SHJ) solar cells and epi-silicon films grown by HWCVD. RTSE enables precise thickness control of the 3 to 10 nm thick layers used in the SHJ devices, as well as monitoring crystallinity and surface roughness in real time. With the assistance of in-situ RTSE feedback we have achieved a photovoltaic energy conversion efficiency of 17% on an Al-backed p-type float-zone c-Si wafer. Open-circuit voltages above 650 mV indicate excellent passivation of the c-Si surface by the a-Si:H intrinsic layer. We have used RTSE to obtain information on the degree of crystallinity and the electronic and optical properties of films as a function of deposition conditions. RTSE has indirectly indicated the persistence of a hydrogen layer at the interface between the a-Si:H layer and the crystal silicon substrate. Absorption spectra determined by RTSE have provided guidance in device optimization.We are also applying in-situ RTSE to study the dynamics of HWCVD growth of epi-Si. The goal of this work is to develop low-temperature methods for growing 2-10 μmthick layers of c-Si on c-Si seed layers on glass for solar cell applications. This study presents unique challenges for RTSE, as perfect epitaxial growth of c-Si on a c-Si wafer would produce no change at all in the RTSE spectra. We have found that by monitoring the pseudo-dielectric function in real time during growth we gain immediate feedback on the breakdown of epi-Si growth. Post-deposition analysis of the RTSE data provides quantitative information on the percent of c-Si and a-Si versus film thickness. The RTSE analysis has been confirmed by cross sectional TEM. Based on the rapid feedback provided by RTSE we have surpassed the previous HWCVD maxiumum of 200 nm of epi-Si growth, achieving a maximum thickness of 500 nm of epi-Si. TEM analysis has shown that micron-sized areas of these films achieve 1000 nm of epi-Si thickness.

In situ EELS observation of diamond during hydrogen-ion bombardment

1992 ◽  
Vol 191-194 ◽  
pp. 346-350 ◽  
Author(s):  
K.N. Kushita ◽  
K. Hojou ◽  
S. Furuno ◽  
H. Otsu
Keyword(s):  
Ion Bombardment ◽  
Hydrogen Ion

Stress and Plastic Flow in Silicon During Amorphization by Ion-Bombardment

1989 ◽  
Vol 157 ◽  
Author(s):  
Cynthia A. Volkert
Keyword(s):  
Amorphous Silicon ◽  
Plane Stress ◽  
Laser Scanning ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Out Of Plane ◽  
Curvature Measurements

ABSTRACTThe in-plane stress in silicon wafers during amorphization by ion-bombardment was determined from wafer curvature measurements using an in-situ laser scanning technique. Measurements were made during room temperature bombardment with 2 MeV Ne, Si, Ar, Kr, and Xe ions. In all experiments, compressive stress was built-up in the bombarded region as a function of the fluence, until a maximum was reached at the dose required to form amorphous silicon. During further amorphization by bombardment, the stress decreased and eventually stabilized. If ion bombardment was interrupted during amorphization, a stress increase was observed over a period of several minutes; when the beam was turned on again, the stress returned immediately to the value measured before interruption. Step height measurements were performed on implanted wafers to determine the out-of-plane strain, and RBS was used to determine the damage profiles. A model is proposed that describes the behavior in terms of the expansion of crystalline silicon by the creation of defects and the flow of amorphous silicon under the ion beam.

scholarly journals Characterization and Quantification of Depletion and Accumulation Layers in Solid‐State Li + ‐Conducting Electrolytes Using In Situ Spectroscopic Ellipsometry

2021 ◽  
pp. 2100585
Author(s):  
Leon Katzenmeier ◽  
Leif Carstensen ◽  
Simon J. Schaper ◽  
Peter Müller‐Buschbaum ◽  
Aliaksandr S. Bandarenka
Keyword(s):  
Solid State ◽  
Spectroscopic Ellipsometry

An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications

2014 ◽  
Vol 571 ◽  
pp. 437-441 ◽  
Author(s):  
Lennart Fricke ◽  
Tammo Böntgen ◽  
Jan Lorbeer ◽  
Carsten Bundesmann ◽  
Rüdiger Schmidt-Grund ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Surface Modifications ◽  
Thin Layers ◽  
Drude Model
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