Ion bombardment effect on preferred orientation in Ni–Fe film formed by ion beam sputtering

1987 ◽  
Vol 5 (1) ◽  
pp. 61-66 ◽  
Author(s):  
Yasuhiro Nagai ◽  
Akio Tago ◽  
Tomoyuki Toshima
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Preferred Orientation ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Differences between Sputtering Methods in The Formation of Amorphous Magnetic Alloy Films

1985 ◽  
Vol 58 ◽  
Author(s):  
Y. Hoshi ◽  
M. Naoe
Keyword(s):  
Ion Beam ◽  
Film Surface ◽  
Ion Bombardment ◽  
Plasma Potential ◽  
Magnetic Alloy ◽  
Ion Beam Sputtering ◽  
Amorphous Films ◽  
Beam Sputtering ◽  
Amorphous Structures ◽  
Dual Ion Beam Sputtering

ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.

Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxially Textured HYSC Coated Conductors

1999 ◽  
Vol 585 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Coated Conductors ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluorite Type ◽  
Pyrochlore Type ◽  
Oxide Crystals

AbstractBiaxially aligned film growth by dual-ion-beam sputtering methods were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cubetextured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrower conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300 °C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.

Ar+Ion Bombardment Effect on Composition Variation in Ni-Fe Film Formed by Ion Beam Sputtering

1985 ◽  
Vol 24 (Part 2, No. 4) ◽  
pp. L272-L274 ◽  
Author(s):  
Yasuhiro Nagai ◽  
Chikara Nishimura ◽  
Tomoyuki Toshima
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Beam Sputtering ◽  
Composition Variation ◽  
Beam Sputtering

Effect of reactive‐ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion‐beam sputtering

1994 ◽  
Vol 75 (12) ◽  
pp. 8145-8152 ◽  
Author(s):  
S. K. Ray ◽  
S. Das ◽  
C. K. Maiti ◽  
S. K. Lahiri ◽  
N. B. Chakraborti
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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