Primary Ar+ ion bombardment effect on Ni–Fe film composition formed by ion beam sputtering

1985 ◽  
Vol 3 (6) ◽  
pp. 2147-2151 ◽  
Author(s):  
Yasuhiro Nagai ◽  
Chikara Nishimura ◽  
Tomoyuki Toshima
1985 ◽  
Vol 58 ◽  
Author(s):  
Y. Hoshi ◽  
M. Naoe

ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.


1999 ◽  
Vol 585 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh

AbstractBiaxially aligned film growth by dual-ion-beam sputtering methods were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cubetextured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrower conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300 °C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.


1985 ◽  
Vol 24 (Part 2, No. 4) ◽  
pp. L272-L274 ◽  
Author(s):  
Yasuhiro Nagai ◽  
Chikara Nishimura ◽  
Tomoyuki Toshima

1994 ◽  
Vol 75 (12) ◽  
pp. 8145-8152 ◽  
Author(s):  
S. K. Ray ◽  
S. Das ◽  
C. K. Maiti ◽  
S. K. Lahiri ◽  
N. B. Chakraborti

1999 ◽  
Vol 587 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh

AbstractBiaxially aligned film growth by dual-ion-beam sputtering method were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cube-textured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrow conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300°C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.


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